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CSD17559Q5 Datasheet(PDF) 1 Page - Texas Instruments |
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CSD17559Q5 Datasheet(HTML) 1 Page - Texas Instruments |
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1 / 12 page  0 1 2 3 4 5 6 0 2 4 6 8 10 12 VGS - Gate-to- Source Voltage (V) TC = 25°C Id = 40A TC = 125ºC Id = 40A G001 0 2 4 6 8 10 0 10 20 30 40 50 60 70 80 90 Qg - Gate Charge (nC) ID = 40A VDS =15V G001 1 D 2 D 3 D 4 D D 5 G 6 S 7 S 8 S P0093-01 Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD17559Q5 SLPS374A – NOVEMBER 2012 – REVISED SEPTEMBER 2014 CSD17559Q5 30-V N-Channel NexFET™ Power MOSFET 1 Features Product Summary 1 • Extremely Low Resistance TA = 25°C TYPICAL VALUE UNIT • Ultra-Low Qg and Qgd VDS Drain-to-Source Voltage 30 V • Low Thermal Resistance Qg Gate Charge Total (4.5 V) 39 nC Qgd Gate Charge Gate-to-Drain 9.3 nC • Avalanche Rated VGS = 4.5 V 1.15 m Ω • Pb Free Terminal Plating RDS(on) Drain-to-Source On-Resistance VGS = 10 V 0.95 m Ω • RoHS Compliant VGS(th) Threshold Voltage 1.4 V • Halogen Free • SON 5 mm × 6 mm Plastic Package Ordering Information(1) Device Qty Media Package Ship 2 Applications CSD17559Q5 2500 13-Inch Reel SON 5 × 6 mm Tape and Plastic Package Reel • Point of Load Synchronous Buck in Networking, CSD17559Q5T 250 13-Inch Reel Telecom, and Computing Systems (1) For all available packages, see the orderable addendum at • Synchronous Rectification the end of the data sheet. • Active ORing and Hotswap Applications Absolute Maximum Ratings TA = 25°C VALUE UNIT 3 Description VDS Drain-to-Source Voltage 30 V This 30 V, 0.95 m Ω, 5 × 6 mm SON NexFET™ power VGS Gate-to-Source Voltage ±20 V MOSFET is designed to minimize losses in Continuous Drain Current (Package limited) 100 synchronous rectification and other power conversion A Continuous Drain Current (Silicon limited), applications. ID 257 TC = 25°C Continuous Drain Current(1) 40 A Top View IDM Pulsed Drain Current(2) 400 A Power Dissipation(1) 3.2 PD W Power Dissipation, TC = 25°C 96 TJ, Operating Junction and –55 to 150 °C Tstg Storage Temperature Range Avalanche Energy, single pulse EAS 541 mJ ID = 104 A, L = 0.1m H, RG = 25 Ω (1) Typical RθJA = 40°C/W on 1 inch 2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu pad on a 0.06 inch (1.52 mm) thick FR4 PCB. (2) Max RθJC = 1.2°C/W, pulse duration ≤100 μs, duty cycle ≤1% RDS(on) vs VGS Gate Charge 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. |
Similar Part No. - CSD17559Q5_16 |
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Similar Description - CSD17559Q5_16 |
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