0

2

4

6

8

10

12

14

16

0

2

4

6

8

10

12

14

16

18

20

G001

0

2

4

6

8

10

0

5

10

15

20

25

30

35

40

45

G001

1

D

2

D

3

D

4

D

D

5

G

6

S

7

S

8

S

P0093-01

Product

Folder

Sample &

Buy

Technical

Documents

Tools &

Software

Support &

Community

CSD18532Q5B

SLPS322B – NOVEMBER 2012 – REVISED JULY 2014

CSD18532Q5B 60-V N-Channel NexFET™ Power MOSFETs

1 Features

Product Summary

1

•

TYPICAL VALUE

UNIT

•

Low Thermal Resistance

Drain-to-Source Voltage

60

V

•

Avalanche Rated

Gate Charge Total (10 V)

44

nC

Gate Charge Gate-to-Drain

6.9

nC

•

Logic Level

3.3

m

Ω

•

Pb Free Terminal Plating

Drain-to-Source On Resistance

2.5

m

Ω

•

RoHS Compliant

Threshold Voltage

1.8

V

•

Halogen Free

•

SON 5-mm × 6-mm Plastic Package

Ordering Information(1)

Device

Qty

Media

Package

Ship

2 Applications

CSD18532Q5B

2500

13-Inch Reel

SON 5 × 6 mm

Tape and

Plastic Package

Reel

•

DC-DC Conversion

CSD18532Q5BT

250

13-Inch Reel

•

Secondary Side Synchronous Rectifier

(1) For all available packages, see the orderable addendum at

the end of the data sheet.

•

Isolated Converter Primary Side Switch

•

Motor Control

Absolute Maximum Ratings

VALUE

UNIT

3 Description

Drain-to-Source Voltage

60

V

This 2.5 m

Ω, 60 V SON 5 mm × 6 mm NexFET™

Gate-to-Source Voltage

±20

V

power MOSFET is designed to minimize losses in

Continuous Drain Current (Package limited)

100

power conversion applications.

Continuous Drain Current (Silicon limited),

172

A

Top View

Continuous Drain Current(1)

23

Pulsed Drain Current(2)

400

A

Power Dissipation(1)

3.2

W

156

Operating Junction and

–55 to 150

°C

Storage Temperature Range

Avalanche Energy, single pulse

320

mJ

inch thick FR4 PCB.

Gate Charge

1

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.