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CSD19537Q3 Datasheet(PDF) 1 Page - Texas Instruments |
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CSD19537Q3 Datasheet(HTML) 1 Page - Texas Instruments |
1 / 13 page Qg - Gate Charge (nC) 0 2 4 6 8 10 12 14 16 0 1 2 3 4 5 6 7 8 9 10 D004 ID = 10 A VDS = 50 V VGS - Gate-To-Source Voltage (V) 0 2 4 6 8 10 12 14 16 18 20 0 5 10 15 20 25 30 35 40 D007 TC = 25°C, I D = 10 A TC = 125°C, I D = 10 A 1 D 2 D 3 D 4 D D 5 G 6 S 7 S 8 S P0095-01 Product Folder Sample & Buy Technical Documents Tools & Software Support & Community An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. CSD19537Q3 SLPS549A – AUGUST 2015 – REVISED MAY 2016 CSD19537Q3 100-V N-Channel NexFET™ Power MOSFET 1 1 Features 1 • Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Lead Free Terminal Plating • RoHS Compliant • Halogen Free • SON 3.3-mm × 3.3-mm Plastic Package 2 Applications • Primary Side Isolated Converters • Motor Control 3 Description This 100-V, 12.1-m Ω, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications. Top View . . . Product Summary TA = 25°C TYPICAL VALUE UNIT VDS Drain-to-Source Voltage 100 V Qg Gate Charge Total (10 V) 16 nC Qgd Gate Charge Gate-to-Drain 2.9 nC RDS(on) Drain-to-Source On-Resistance VGS = 6 V 13.8 m Ω VGS = 10 V 12.1 m Ω VGS(th) Threshold Voltage 3 V . Ordering Information(1) DEVICE MEDIA QTY PACKAGE SHIP CSD19537Q3 13-Inch Reel 2500 SON 3.3- x 3.3-mm Plastic Package Tape and Reel CSD19537Q3T 13-Inch Reel 250 (1) For all available packages, see the orderable addendum at the end of the data sheet. Absolute Maximum Ratings TA = 25°C VALUE UNIT VDS Drain-to-Source Voltage 100 V VGS Gate-to-Source Voltage ±20 V ID Continuous Drain Current (Package Limited) 50 A Continuous Drain Current (Silicon Limited), TC = 25°C 53 A Continuous Drain Current(1) 9.7 A IDM Pulsed Drain Current(2) 219 A PD Power Dissipation(1) 2.8 W Power Dissipation, TC = 25°C 83 W TJ, Tstg Operating Junction Temperature, Storage Temperature –55 to 150 °C EAS Avalanche Energy, Single Pulse ID = 33 A, L = 0.1 mH, RG = 25 Ω 55 mJ (1) Typical RθJA = 45°C/W on a 1-in 2, 2-oz Cu pad on a 0.06-in thick FR4 PCB. (2) Max RθJC = 1.5°C/W, pulse duration ≤ 100 μs, duty cycle ≤ 1%. RDS(on) vs VGS Gate Charge |
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