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CSD85301Q2 Datasheet(PDF) 6 Page - Texas Instruments |
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CSD85301Q2 Datasheet(HTML) 6 Page - Texas Instruments |
6 / 15 page TC - Case Temperature (°C) -50 -25 0 25 50 75 100 125 150 175 0 1 2 3 4 5 6 D012 VDS - Drain-to-Source Voltage (V) 0.1 1 10 100 0.1 1 10 100 D010 100 ms 10 ms 1 ms 100 µs 10 µs TAV - Time in Avalanche (ms) 0.01 0.1 1 1 10 D011 TC = 25GC TC = 125GC TC - Case Temperature (°C) -75 -50 -25 0 25 50 75 100 125 150 175 0.6 0.8 1 1.2 1.4 1.6 1.8 D008 VGS = 1.8 V VGS = 2.5 V VGS = 4.5 V VSD - Source-to-Drain Voltage (V) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0.0001 0.001 0.01 0.1 1 10 100 D009 TC = 25°C TC = 125°C CSD85301Q2 SLPS521 – DECEMBER 2014 www.ti.com Typical MOSFET Characteristics (continued) (TA = 25°C unless otherwise stated) ID = 5 A Figure 8. Normalized On-State Resistance vs Temperature Figure 9. Typical Diode Forward Voltage Single Pulse, Max RθJA = 185°C/W Figure 10. Maximum Safe Operating Area Figure 11. Single Pulse Unclamped Inductive Switching Figure 12. Maximum Drain Current vs Temperature 6 Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: CSD85301Q2 |
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