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CSD85301Q2T Datasheet(PDF) 3 Page - Texas Instruments |
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CSD85301Q2T Datasheet(HTML) 3 Page - Texas Instruments |
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3 / 15 page  CSD85301Q2 www.ti.com SLPS521 – DECEMBER 2014 5 Specifications 5.1 Electrical Characteristics (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 250 μA 20 V IDSS Drain-to-Source Leakage Current VGS = 0 V, VDS = 16 V 1 μA IGSS Gate-to-Source Leakage Current VDS = 0 V, VGS = 10 V 10 μA VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, ID = 250 μA 0.6 0.9 1.2 V VGS = 1.8 V, ID = 0.5 A 65 99 m Ω VGS = 2.5 V, ID = 5 A 33 39 m Ω RDS(on) Drain-to-Source On-Resistance VGS = 3.8 V, ID = 5 A 25 29 m Ω VGS = 4.5 V, ID = 5 A 23 27 m Ω gƒs Transconductance VDS = 2 V, ID = 5 A 20 S DYNAMIC CHARACTERISTICS Ciss Input Capacitance 361 469 pF Coss Output Capacitance VGS = 0 V, VDS = 10 V, ƒ = 1 MHz 68 89 pF Crss Reverse Transfer Capacitance 48 62 pF RG Series Gate Resistance 7.3 Ω Qg Gate Charge Total (4.5 V) 4.2 5.4 nC Qgd Gate Charge Gate-to-Drain 1.0 nC VDS = 10 V, ID = 5 A Qgs Gate Charge Gate-to-Source 1.1 nC Qg(th) Gate Charge at Vth 0.5 nC Qoss Output Charge VDS = 10 V, VGS = 0 V 1.3 nC td(on) Turn On Delay Time 6 ns tr Rise Time 26 ns VDS = 10 V, VGS = 5 V, IDS = 5 A, RG = 0 Ω td(off) Turn Off Delay Time 14 ns tƒ Fall Time 15 ns DIODE CHARACTERISTICS VSD Diode Forward Voltage ISD = 5 A, VGS = 0 V 0.8 1.0 V Qrr Reverse Recovery Charge 7.2 nC VDS= 10 V, IF = 5 A, di/dt = 300 A/ μs trr Reverse Recovery Time 14 ns 5.2 Thermal Information (TA = 25°C unless otherwise stated) THERMAL METRIC MIN TYP MAX UNIT Junction-to-Ambient Thermal Resistance(1) 70 RθJA °C/W Junction-to-Ambient Thermal Resistance(2) 185 (1) Device mounted on FR4 material with 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu. (2) Device mounted on FR4 material with minimum Cu mounting area. Copyright © 2014, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Links: CSD85301Q2 |
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