DMP2240UWQ

Document number: DS37585 Rev. 1 - 2

2 of 5

www.diodes.com

November 2014

© Diodes Incorporated

DMP2240UWQ

Characteristic

Symbol

Value

Units

Drain-Source Voltage

-20

V

Gate-Source Voltage

±12

V

Drain Current (Note 6)

-1.5

-1.0

A

Pulsed Drain Current

-5

A

Thermal Characteristics

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 6)

250

mW

Thermal Resistance, Junction to Ambient

500

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

-20





V

Zero Gate Voltage Drain Current





-1.0

-5.0

A

Gate-Source Leakage





100

nA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

-0.45



-1.0

V

Static Drain-Source On-Resistance



92

134

180

150

200

240

m



Forward Transconductance



3.1



S

Diode Forward Voltage (Note 7)





-0.9

V

DYNAMIC CHARACTERISTICS

Input Capacitance



320



pF

f = 1.0MHz

Output Capacitance



80



pF

Reverse Transfer Capacitance



60



pF

Turn-On Delay Time



12.5



ns

Turn-On Rise Time



10.3



ns

Turn-Off Delay Time



46.5



ns

Turn-Off Fall Time



22.2



ns

Notes:

6. Device mounted on FR-4 substrate PC board, 2oz. Copper, with minimum recommended pad layout.

7. Short duration pulse test used to minimize self-heating effect.

V

= -3.0V

GS

V

= -2.0V

GS

V

= -1.8V

GS

V

= -1.6V

GS

V

= -1.4V

GS

V

= -1.2V

GS

V

= -1.0V

GS

V

= -10V

DS

T = 125°C

A

T = 25°C

A

T = -55°C

A