DMP3105LVT-7 datasheet(4/6 Pages) DIODES

Part #	DMP3105LVT-7

Description	30V P-CHANNEL ENHANCEMENT MODE MOSFET

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Manufacturer	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

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4 / 6 page

DMP3105LVT

Document number: DS35504 Rev. 2 - 2

4 of 6

www.diodes.com

November 2011

DMP3105LVT

-50

-25

025

5075

100

125

150

T , JUNCTION TEMPERATURE ( C)

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

J

°

0

0.2

0.4

0.6

0.8

1

1.2

I = -250µA

D

I= -1mA

D

1.4

V

, SOURCE-DRAIN VOLTAGE (V)

Fig. 8 Diode Forward Voltage vs. Current

SD

0

4

8

12

16

20

0.4

0.6

0.8

1

1.2

T= 25 C

A

°

V

, DRAIN-SOURCE VOLTAGE (V)

Fig. 9 Typical Drain-Source Leakage Current vs. Voltage

DS

1

10

100

1000

10000

100000

0

5

10

15

20

25

30

T =

A

25 C

°

T =

A

85 C

°

T = 150 C

A

°

-V

, DRAIN-SOURCE VOLTAGE (V)

Fig. 10 Typical Junction Capacitance

DS

10

100

1000

10000

0

5

10

15

20

25

30

f = 1MHz

CRSS

CISS

C

OSS

Q -(nC)

Fig. 11 Gate Charge Characteristics

G

0

2

4

6

8

10

0

5

10

15

20

-V

, DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 12 SOA, Safe Operation Area

0.01

0.1

1

10

100

0.01

0.1

1

10

100

I(A) @P =10s

DW

I (A) @ DC

D

I(A) @P =1s

DW

I (A) @P =100ms

DW

I(A) @P =10ms

DW

I(A) @P =1ms

DW

I(A) @

P =10µs

D

W

I

(A

) @

P

=1

00

µs

D

W

T

= 150 C

T= 25 C

Single Pulse

J(MAX)

A

°

R

Limited

DS(ON)

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