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DMP4013LFGQ-7 Datasheet(PDF) 4 Page - Diodes Incorporated

Part # DMP4013LFGQ-7
Description  40V P-CHANNEL ENHANCEMENT MODE MOSFET
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMP4013LFGQ-7 Datasheet(HTML) 4 Page - Diodes Incorporated

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DMP4013LFGQ
Document number: DS38779 Rev. 1 - 2
4 of 7
www.diodes.com
April 2016
© Diodes Incorporated
DMP4013LFGQ
T , JUNCTION TEMPERATURE ( C)
J
Figure 7 On-Resistance Variation with Temperature
0.004
0.006
0.008
0.01
0.012
0.014
0.016
0.018
0.02
0.022
-50
-25
0
25
50
75
100
125
150
V
= -10V
I =
A
GS
D
-10
V
=
5V
I =
A
GS
D
-4.
-8
T , AMBIENT TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
A
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
-50
-25
0
25
50
75
100
125
150
-I = 1mA
D
-I = 250µA
D
V
, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
SD
0
5
T = 150 C
A
10
15
20
25
30
0
0.3
0.6
0.9
1.2
1.5
T = 125 C
A
T = 25 C
A
T = -55 C
A
T = 85 C
A
V
, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
DS
100
1000
10000
0
5
10
15
20
25
30
35
40
Coss
Crss
f = 1MHz
C
iss
Q , TOTAL GATE CHARGE (nC)
Figure 11 Gate-Charge Characteristics
g
0
2
4
6
8
10
0
10
20
30
40
50
60
70
V
= -20V
I = -10A
DS
D
V
, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
DS
0.01
0.1
1
10
100
0.1
1
10
100
R
Limited
DS(on)
DC
P
= 10s
W
P
= 1s
W
P
= 100ms
W
P
= 10ms
W
P
= 1ms
W
P
= 100µs
W
T
= 150°C
T = 25°C
J(max)
A
V
= -10V
Single Pulse
GS
DUT on 1 * MRP Board


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