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CPC5602CTR Datasheet(PDF) 1 Page - IXYS Corporation |
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CPC5602CTR Datasheet(HTML) 1 Page - IXYS Corporation |
1 / 5 page INTEGRATED CIRCUITS DIVISION www.ixysic.com DS-CPC5602-R10 1 CPC5602 N-Channel Depletion Mode FET Applications Features Description Ordering Information Package Pinout • Support Component for LITELINK™ Data Access Arrangement (DAA) • Telecommunications • Normally On Switches • Ignition Modules • Converters • Security • Power Supplies • 350V Drain-to-Source Voltage • Depletion Mode Device Offers Low R DS(on) at Cold Temperatures • Low On-resistance: 8 (Typical) @ 25°C • Low V GS(off) Voltage: -2.0V to -3.6V • High Input Impedance • Low Input and Output Leakage • Small Package Size SOT-223 • PC Card (PCMCIA) Compatible • PCB Space and Cost Savings The CPC5602 is an N-channel depletion mode Field Effect Transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a highly reliable device, particularly in difficult application environments such as telecommunications, security, and power supplies. One of the primary applications for the CPC5602 is as a linear regulator/hook switch for the LITELINK family of Data Access Arrangements (DAA) Devices CPC5620A, CPC5621A, and CPC5622A. The CPC5602 has a typical on-resistance of 8 , a drain-to-source voltage of 350V, and is available in an SOT-223 package. As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown. Pin Number Name 1GATE 2 DRAIN 3 SOURCE 4 DRAIN Parameter Rating Units Drain-to-Source Voltage - V DS 350 V Max On-Resistance - R DS(on) 14 Max Power 2.5 W D G D S 4 1 23 Part # Description CPC5602CTR N-Channel Depletion Mode FET, SOT-223 Pkg. Tape and Reel (1000/Reel) |
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