SCAN928028

SNLS163F – AUGUST 2003 – REVISED APRIL 2013

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Block Diagram

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Absolute Maximum Ratings

(1) (2)

−0.3V to +4V

LVCMOS/LVTTL Input Voltage

Bus LVDS Driver Output Voltage

−0.3V to +3.9V

Bus LVDS Output Short Circuit Duration

10ms

34°C/W

Package Thermal Resistance

8°C/W

Storage Temperature

−65°C to +150°C

Junction Temperature

+125°C

Lead Temperature

(Soldering, 4 seconds)

+225°C

ESD Rating (HBM)

±1.5kV

Reliability Information

Transistor Count:

44.8k

(1)

Absolute Maximum Ratings are those values beyond which the safety of the device cannot be specified. They are not meant to imply

that the devices should be operated at these limits. The table of Electrical Characteristics specifies conditions of device operation.

(2)

If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and

specifications.

Recommended Operating Conditions

Min

Typ

Max

Units

3.0

3.3

3.6

V

Operating Free Air

−40

+25

+85

°C

Clock Rate

18

66

MHz

2

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