FDFS2P102 Rev. E

Figure 7. Gate-Charge Characteristics.

Figure 8. Capacitance Characteristics.

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.

Transient themal response will change depending on the circuit board design.

0

2

4

6

8

10

0

5

10

15

20

25

30

35

20V

40V

0

400

800

1200

1600

2000

2400

0

1020

304050607080

f = 1MHz

Figure 10. Schottky Diode Reverse Current.

Figure 9. Schottky Diode Forward Voltage.

0

0.1

0.2

0.3

0.4

0.5

0.6

0.1

0.2

0.5

1

2

5

10

V , FORWARD VOLTAGE (V)

25 C

F

T = 125 C

J

0

5

10

15

20

0.0001

0.0002

0.0005

0.001

V

, R EVER SE V O LTA G E (V)

R

T = 25 C

J

0.0001

0.001

0.01

0.1

1

10

100

300

0.001

0.002

0.005

0.01

0.02

0.05

0.1

0.2

0.5

1

t , TIME (sec)

1

Single Pulse

D = 0.5

0.1

0.05

0.02

0.01

0.2

Duty Cycle, D = t /t

1

2

R

(t) = r(t) * R

R

=135 C/W

θJA

θJA

θJA

T - T

= P * R

(t)

A

J

P(pk)