©2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001

NPN Epitaxial Silicon Transistor

Symbol

Parameter

Ratings

Units

Collector-Base Voltage

160

V

Collector-Emitter Voltage

140

V

Emitter-Base Voltage

8

V

Collector Current

700

mA

Collector Power Dissipation

800

mW

Junction Temperature

150

°C

Storage Temperature

-55 ~ 150

°C

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

Collector-Base Breakdown Voltage

160

V

Collector-Emitter Breakdown Voltage

140

V

Emitter-Base Breakdown Voltage

8

V

Collector Cut-off Current

0.1

µA

Emitter Cut-off Current

0.1

µA

DC Current Gain

40

400

Collector-Emitter Saturation Voltage

0.2

0.7

V

Base-Emitter Saturation Voltage

0.86

1.0

V

Current Gain Bandwidth Product

30

50

MHz

Output Capacitance

8

pF

Classification

R

O

Y

G

40 ~ 80

70 ~ 140

120 ~ 240

200 ~ 400

KSC1009

High Voltage Amplifier

• Complement to KSA709

• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)

1. Emitter 2. Base 3. Collector

TO-92

1