© Semiconductor Components Industries, LLC, 2002

March, 2002 – Rev. 1

1

Publication Order Number:

MJW21193/D

MJW21193 (PNP)

MJW21194 (NPN)

Preferred Devices

Silicon Power Transistors

The MJW21193 and MJW21194 utilize Perforated Emitter

technology and are specifically designed for high power audio output,

disk head positioners and linear applications.

hFE = 20 Min @ IC = 8 Adc

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

VCEO

250

Vdc

Collector–Base Voltage

VCBO

400

Vdc

Emitter–Base Voltage

VEBO

5.0

Vdc

Collector–Emitter Voltage – 1.5 V

VCEX

400

Vdc

Collector Current – Continuous

IC

16

30

Adc

Base Current – Continuous

IB

5.0

Adc

Total Power Dissipation @ TC = 25°C

Derate Above 25

°C

PD

200

1.43

Watts

W/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

–65 to

+150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance,

Junction to Case

R

θJC

0.7

°C/W

Thermal Resistance,

Junction to Ambient

R

θJA

40

°C/W

1. Pulse Test: Pulse Width = 5

ms, Duty Cycle ≤ 10%.

Device

Package

Shipping

ORDERING INFORMATION

MJW21193

TO–247

http://onsemi.com

TO–247

CASE 340K

STYLE 3

30 Units/Rail

2

1

16 AMPERES

COMPLEMENTARY

SILICON POWER

TRANSISTORS

250 VOLTS

200 WATTS

3

MARKING DIAGRAM

MJW

2119x

LLYWW

MJW2119x = Device Code

x

= 3 or 4

LL

= Location Code

Y

= Year

WW

= Work Week

Preferred devices are recommended choices for future use

and best overall value.

MJW21194

TO–247

30 Units/Rail

1 BASE

2 COLLECTOR

3 EMITTER