IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXXK110N65B4H1

IXXX110N65B4H1

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Symbol Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

I

24

40

S

C

3650

pF

C

oes

V

440

pF

C

res

143

pF

Q

g(on)

183

nC

Q

ge

I

32

nC

Q

gc

83

nC

t

d(on)

38

ns

t

ri

46

ns

E

on

2.20

mJ

t

d(off)

156

ns

t

fi

85

ns

E

1.05

1.70 mJ

t

d(on)

34

ns

t

ri

46

ns

E

on

3.15

mJ

t

d(off)

160

ns

t

fi

105

ns

E

off

1.40

mJ

R

thJC

0.17 °C/W

R

thCS

0.15

°C/W

Inductive load, T

I

V

Note 2

Reverse Sonic Diode (FRD)

Symbol Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

V

F

I

1.7

2.3

V

T

1.8

V

I

RM

95

A

t

rr

100

ns

R

thJC

0.38

°C/W

I

T

-d

i

Inductive load, T

I

V

Note 2

Notes:

1. Pulse test, t

≤ 300μs, duty cycle, d ≤ 2%.

2. Switching times & energy losses may increase for higher V

TO-264 Outline

PINS:

1 - Gate

2 - Collector

3 - Emitter

PINS:

1 - Gate

2,4 - Collector

3 - Emitter