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IXXX110N65B4H1 Datasheet(PDF) 2 Page - IXYS Corporation |
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IXXX110N65B4H1 Datasheet(HTML) 2 Page - IXYS Corporation |
2 / 7 page IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXXK110N65B4H1 IXXX110N65B4H1 IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 Symbol Test Conditions Characteristic Values (T J = 25°C Unless Otherwise Specified) Min. Typ. Max. g fs I C = 60A, VCE = 10V, Note 1 24 40 S C ies 3650 pF C oes V CE = 25V, VGE = 0V, f = 1MHz 440 pF C res 143 pF Q g(on) 183 nC Q ge I C = 110A, VGE = 15V, VCE = 0.5 • VCES 32 nC Q gc 83 nC t d(on) 38 ns t ri 46 ns E on 2.20 mJ t d(off) 156 ns t fi 85 ns E off 1.05 1.70 mJ t d(on) 34 ns t ri 46 ns E on 3.15 mJ t d(off) 160 ns t fi 105 ns E off 1.40 mJ R thJC 0.17 °C/W R thCS 0.15 °C/W Inductive load, T J = 150°C I C = 55A, VGE = 15V V CE = 400V, RG = 2Ω Note 2 Reverse Sonic Diode (FRD) Symbol Test Conditions Characteristic Values (T J = 25°C Unless Otherwise Specified) Min. Typ. Max. V F I F = 100A, VGE = 0V, Note 1 1.7 2.3 V T J = 150°C 1.8 V I RM 95 A t rr 100 ns R thJC 0.38 °C/W I F = 100A, VGE = 0V, T J = 150°C -d i F/dt = 1500A/μs, VR = 300V Inductive load, T J = 25°C I C = 55A, VGE = 15V V CE = 400V, RG = 2Ω Note 2 Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher V CE(Clamp), TJ or RG. TO-264 Outline PLUS247TM Outline PINS: 1 - Gate 2 - Collector 3 - Emitter PINS: 1 - Gate 2,4 - Collector 3 - Emitter |
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