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DP8420A Datasheet(PDF) 5 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part # DP8420A
Description  microCMOS Programmable 256k/1M/4M Dynamic RAM Controller/Drivers
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

DP8420A Datasheet(HTML) 5 Page - National Semiconductor (TI)

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20 Signal Descriptions
Pin
Device (If not
Input
Description
Name
Applicable to All)
Output
21 ADDRESS RW AND PROGRAMMING SIGNALS
R0 – 10
DP8422A
I
ROW ADDRESS
These inputs are used to specify the row address during an access
to the DRAM They are also used to program the chip when ML is asserted (except
R0 – 9
DP8420A21A
I
R10)
C0 – 10
DP8422A
I
COLUMN ADDRESS
These inputs are used to specify the column address during an
access to the DRAM They are also used to program the chip when ML is asserted
C0 – 9
DP8420A21A
I
(except C10)
B0 B1
I
BANK SELECT
Depending on programming these inputs are used to select a group
of RAS and CAS outputs to assert during an access They are also used to program
the chip when ML is asserted
ECAS0–3
I
ENABLE CAS
These inputs are used to enable a single or group of CAS outputs
when asserted In combination with the B0 B1 and the programming bits these
inputs select which CAS output or CAS outputs will assert during an access The
ECAS signals can also be used to toggle a group of CAS outputs for pagenibble
mode accesses They also can be used for byte write operations If ECAS0is
negated during programming continuing to assert the ECAS0 while negating AREQ
or AREQB during an access will cause the CAS outputs to be extended while the
RAS outputs are negated (the ECASn inputs have no effect during scrubbing
refreshes)
WIN
I
WRITE ENABLE IN
This input is used to signify a write operation to the DRAM If
ECAS0 is asserted during programming the WE output will follow this input This
input asserted will also cause CAS to delay to the next positive clock edge if address
bit C9 is asserted during programming
COLINC
I
COLUMN INCREMENT
When the address latches are used and RFIP is negated
this input functions as COLINC Asserting this signal causes the column address to
(EXTNDRF)
I
be incremented by one When RFIP is asserted this signal is used to extend the
refresh cycle by any number of periods of CLK until it is negated
ML
I
MODE LOAD
This input signal when low enables the internal programming register
that stores the programming information
22 DRAM CONTROL SIGNALS
Q0 – 10
DP8422A
O
DRAM ADDRESS
These outputs are the multiplexed output of the R0 – 9 10 and
C0 – 9 10 and form the DRAM address bus These outputs contain the refresh
Q0 – 9
DP8421A
O
address whenever RFIP is asserted They contain high capacitive drivers with 20X
Q0 – 8
DP8421A
O
series damping resistors
RAS0–3
O
ROW ADDRESS STROBES
These outputs are asserted to latch the row address
contained on the outputs Q0 – 8 9 10 into the DRAM When RFIP is asserted the
RAS outputs are used to latch the refresh row address contained on the Q0 – 8 9 10
outputs in the DRAM These outputs contain high capacitive drivers with 20X series
damping resistors
CAS0–3
O
COLUMN ADDRESS STROBES
These outputs are asserted to latch the column
address contained on the outputs Q0 – 8 9 10 into the DRAM These outputs have
high capacitive drivers with 20X series damping resistors
WE
O
WRITE ENABLE
or REFRESH REQUEST This output asserted specifies a write
operation to the DRAM When negated this output specifies a read operation to the
(RFRQ)O
DRAM When the DP8420A21A22A is programmed in address pipelining mode or
when ECAS0 is negated during programming this output will function as RFRQ
When asserted this pin specifies that 13 msor15 ms have passed If DISRFSH is
negated the DP8420A21A22A will perform an internal refresh as soon as possible
If DISRFRSH is asserted RFRQ can be used to externally request a refresh through
the input RFSH This output has a high capacitive driver and a 20X series damping
resistor
5


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