DMPH4015SK3Q datasheet(4/7 Pages) DIODES

Part #	DMPH4015SK3Q

Description	P-CHANNEL ENHANCEMENT MODE MOSFET

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Manufacturer	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

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4 / 7 page

DMPH4015SK3Q

Document number: DS38125 Rev. 2 - 2

4 of 7

www.diodes.com

April 2016

DMPH4015SK3Q

0.004

0.006

0.008

0.01

0.012

0.014

0.016

0.018

0.02

-50

-25

0

25

50

75

100

125

150

175

T

J, JUNCTION TEMPERATURE (℃)

Figure 7. On-Resistance Variation with Temperature

V

GS=-10V, ID=-9.8A

V

GS=-4.5V, ID=-9.8A

1

1.2

1.4

1.6

1.8

2

2.2

-50

-25

0

25

50

75

100

125

150

175

T

J, JUNCTION TEMPERATURE (℃)

Figure 8. Gate Threshold Variation vs Temperature

I

D=-1mA

I

D=-250µA

0

5

10

15

20

25

30

0

0.3

0.6

0.9

1.2

1.5

V

SD, SOURCE-DRAIN VOLTAGE (V)

Figure 9. Diode Forward Voltage vs. Current

V

GS=0V,

T

A=-55℃

V

GS=0V,

T

A=25℃

V

GS=0V,

T

A=85℃

V

GS=0V,

T

A=175℃

V

GS=0V,

T

A=150℃

V

GS=0V,

T

A=125℃

100

1000

10000

0

5

10

15

20

25

30

-V

DS, DRAIN-SOURCE VOLTAGE (V)

Figure 10. Typical Junction Capacitance

f=1MHz

Ciss

Coss

Crss

0

2

4

6

8

10

0

20

40

60

80

100

120

Qg (nC)

Figure 11. Gate Charge

V

DS=-20V, ID=-9.8A

0.1

1

10

100

1000

0.1

1

10

100

V

DS, DRAIN-SOURCE VOLTAGE (V)

Figure 12. SOA, Safe Operation Area

T

J(MAX)=175℃

T

C=25℃

Single Pulse

DUT on infinite heatsink

V

GS=-4.5V

R

DS(ON) LIMITED

P

W=1s

P

W=100ms

P

W=10ms

P

W=1ms

P

W=100µs

P

W=10µs

P

W=1µs

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