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LM3423 Datasheet(PDF) 7 Page - Texas Instruments |
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LM3423 Datasheet(HTML) 7 Page - Texas Instruments |
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7 / 72 page  LM3421, LM3421-Q1, LM3423, LM3423-Q1 www.ti.com SNVS574F – JULY 2008 – REVISED JULY 2015 Electrical Characteristics (continued) MIN and MAX limits apply for TJ = −40°C to 150°C for LM3421Q0/LM3423Q0, TJ = −40°C to 125°C for all others, unless otherwise specified. Specifications that differ between the two operating ranges will be identified in the Temp Range column as Q0 for TJ = −40°C to 150°C and as Q1 for TJ = −40°C to 125°C. If no temperature range is indicated then the specification holds for both Q1 and Q0. Minimum and Maximum limits are specified through test, design, or statistical correlation. Typical values represent the most likely parametric norm at TJ = 25°C, and are provided for reference purposes only. Unless otherwise stated the following condition applies: VIN = 14 V. TEMP PARAMETER TEST CONDITIONS MIN(1) TYP(2) MAX(1) UNIT RANGE Q1 22 30 35 µA COMP Sink / Source Current Q0 22 30 36 µA Transconductance 100 µA/V Linear Input Range (3) ±125 mV -6dB Unloaded Response (3), Transconductance Bandwidth 0.5 1 MHz MIN = TJ = 25°C OFF TIMER Q1 35 75 RCT = 1 V through Minimum OFF-time ns 1 k Ω Q0 35 90 Q1 36 120 RCT Reset Pulldown RRCT Ω Resistance Q0 36 125 Q1 540 565 585 VRCT VIN/25 Reference Voltage VIN = 14 V mV Q0 540 565 590 Continuous Conduction f 2.2 nF > CT > 470 pF 25/(CTRT) Hz Switching Frequency PWM COMPARATOR COMP to PWM Offset 700 800 900 mV CURRENT LIMIT (IS) ILIM Current Limit Threshold 215 245 275 mV Q1 35 75 ns ILIM Delay to Output Q0 35 90 ns Leading Edge Blanking Time 115 210 325 ns HIGH SIDE TRANSCONDUCTANCE AMPLIFIER Input Bias Current 11.5 µA Transconductance 20 119 mA/V Input Offset Current –1.5 0 1.5 µA Input Offset Voltage –7 0 7 mV Transconductance Bandwidth ICSH = 100 µA (3), T J = 25°C 250 500 kHz GATE DRIVER (GATE) RSRC(GATE) GATE Sourcing Resistance GATE = High 2 6 Ω RSNK(GATE) GATE Sinking Resistance GATE = Low 1.3 4.5 Ω DIM DRIVER (DIM, DDRV) nDIMVTH nDIM / UVLO Threshold 1.185 1.24 1.285 V Q1 20 23 25 nDIMHYS nDIM Hysteresis Current µA Q0 20 23 26 RSRC(DDRV) DDRV Sourcing Resistance DDRV = High 13.5 30 Ω RSNK(DDRV) DDRV Sinking Resistance DDRV = Low 3.5 10 Ω PULLDOWN N-CHANNEL MOSFETS Q1 145 300 Ω RRPD RPD Pulldown Resistance Q0 145 350 Ω (3) These electrical parameters are specified by design, and are not verified by test. Copyright © 2008–2015, Texas Instruments Incorporated Submit Documentation Feedback 7 Product Folder Links: LM3421 LM3421-Q1 LM3423 LM3423-Q1 |
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