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K6X4008C1F Datasheet(PDF) 4 Page - Samsung semiconductor |
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K6X4008C1F Datasheet(HTML) 4 Page - Samsung semiconductor |
4 / 9 page K6X4008C1F Family CMOS SRAM Revision 1.0 September 2003 4 RECOMMENDED DC OPERATING CONDITIONS1) Note: 1.Commercial Product: TA=0 to 70 °C, otherwise specified Industrial Product: TA=-40 to 85 °C, otherwise specified Automotive Product: TA=-40 to 125 °C, otherwise specified 2. Overshoot: VCC+3.0V in case of pulse width ≤ 30ns 3. Undershoot: -3.0V in case of pulse width ≤ 30ns 4. Overshoot and undershoot are sampled, not 100% tested. Item Symbol Min Typ Max Unit Supply voltage Vcc 4.5 5.0 5.5 V Ground Vss 0 0 0 V Input high voltage VIH 2.2 - Vcc+0.52) V Input low voltage VIL -0.53) - 0.8 V CAPACITANCE1) (f=1MHz, TA=25 °C) 1. Capacitance is sampled, not 100% tested Item Symbol Test Condition Min Max Unit Input capacitance CIN VIN=0V - 8 pF Input/Output capacitance CIO VIO=0V - 10 pF DC AND OPERATING CHARACTERISTICS Item Symbol Test Conditions Min Typ Max Unit Input leakage current ILI VIN=Vss to Vcc -1 - 1 µA Output leakage current ILO CS=VIH or OE=VIH or WE=VIL, VIO=Vss to Vcc -1 - 1 µA Operating power supply current ICC IIO=0mA, CS=VIL, VIN=VIL or VIH, Read - - 5 mA Average operating current ICC1 Cycle time=1 µs, 100% duty, IIO=0mA CS ≤0.2V, VIN≥0.2V or VIN≥Vcc-0.2V - - 7 mA ICC2 Cycle time=Min, 100% duty, IIO=0mA, CS=VIL, VIN=VIH or VIL - - 30 mA Output low voltage VOL IOL=2.1mA - - 0.4 V Output high voltage VOH IOH=-1.0mA 2.4 - - V Standby Current(TTL) ISB CS=VIH, Other inputs = VIL or VIH - - 0.4 mA Standby Current(CMOS) ISB1 CS ≥Vcc-0.2V, Other inputs=0~Vcc K6X4008C1F-B - - 20 µA K6X4008C1F-F - - K6X4008C1F-Q - - 30 µA |
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