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DMT6017LSS Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMT6017LSS Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 6 page DMT6017LSS Document number: DS38852 Rev. 1 - 2 2 of 6 www.diodes.com May 2016 © Diodes Incorporated DMT6017LSS Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25°C TA = +70°C ID 9.2 7.4 A t<10s TA = +25°C TA = +70°C ID 11.9 9.5 A Continuous Drain Current (Note 6) VGS = 4.5V Steady State TA = +25°C TA = +70°C ID 8 6.5 A t<10s TA = +25°C TA = +70°C ID 10 8.1 A Pulsed Drain Current (10 μs Pulse, Duty Cycle = 1%) IDM 60 A Maximum Continuous Body Diode Forward Current (Note 6) IS 2 A Avalanche Current (Note 7) L = 0.1mH IAS 15.3 A Avalanche Energy (Note 7) L = 0.1mH EAS 11.7 mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note 5) PD 1.5 W Thermal Resistance, Junction to Ambient (Note 5) Steady State RJA 85 °C/W t<10s 45 °C/W Total Power Dissipation (Note 6) PD 2.1 W Thermal Resistance, Junction to Ambient (Note 6) Steady State RJA 74 °C/W t<10s 37 °C/W Thermal Resistance, Junction to Case RJC 13 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS 60 — — V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS — — 1 µA VDS = 48V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = 20V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(TH) 1 — 2.5 V VDS = VGS, ID = 250µA Static Drain-Source On-Resistance RDS(ON) — — 18 m Ω VGS = 10V, ID = 10A — — 23 VGS = 4.5V, ID = 6A Diode Forward Voltage VSD — 0.7 1.2 V VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss — 864 — pF VDS = 30V, VGS = 0V, f = 1MHz Output Capacitance Coss — 282 — Reverse Transfer Capacitance Crss — 27 — Gate Resistance Rg — 1.3 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = 4.5V) Qg — 8.4 — nC VDS = 30V, ID = 10A Total Gate Charge (VGS = 10V) Qg — 17 — Gate-Source Charge Qgs — 3.1 — Gate-Drain Charge Qgd — 4.3 — Turn-On Delay Time tD(ON) — 3.4 — ns VGS = 10V, VDS = 30V, RG = 6Ω, ID = 10A Turn-On Rise Time tR — 5.2 — Turn-Off Delay Time tD(OFF) — 13 — Turn-Off Fall Time tF — 7 — Reverse Recovery Time tRR — 22 — ns IF = 10A, di/dt = 100A/µs Reverse Recovery Charge QRR — 11 — nC Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. |
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