K6X4008T1F-VF85 datasheet(6/9 Pages) SAMSUNG

Part #	K6X4008T1F-VF85

Description	512Kx8 bit Low Power and Low Voltage CMOS Static RAM

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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6 / 9 page

K6X4008T1F Family

CMOS SRAM

Revision 1.0

September 2003

6

Address

Data Out

Previous Data Valid

Data Valid

TIMING DIAGRAMS

TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS=OE=VIL, WE=VIH)

tAA

tRC

tOH

TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)

Data Valid

High-Z

CS

Address

OE

Data out

NOTES (READ CYCLE)

1.

tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage

levels.

2. At any given temperature and voltage condition,

tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device

interconnection.

tOH

tAA

tOLZ

tLZ

tOHZ

tHZ

tRC

tOE

tCO1

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K6X4008T1F-VF85 Datasheet(PDF) 6 Page - Samsung semiconductor

K6X4008T1F-VF85 Datasheet(HTML) 6 Page - Samsung semiconductor

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