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K6X0808C1D-GF70 Datasheet(PDF) 6 Page - Samsung semiconductor |
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K6X0808C1D-GF70 Datasheet(HTML) 6 Page - Samsung semiconductor |
6 / 9 page CMOS SRAM K6X0808C1D Family Revision 1.0 December 2003 6 Address Data Out Previous Data Valid Data Valid TIMING DIAGRAMS TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS=OE=VIL, WE=VIH) tAA tRC tOH TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH) Data Valid High-Z CS Address OE Data out NOTES (READ CYCLE) 1. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage levels. 2. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device interconnection. tOH tAA tOLZ tLZ tOHZ tHZ tRC tOE tCO |
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