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20110304b

MIXA20W1200MC

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OuputInverterT1-T6

Ratings

Symbol

Definitions

Conditions

min.

typ. max.

Unit

V

CES

collector emitter voltage

T

25°C

1200

V

V

GES

V

GEM

max. DC gate voltage

max. transient collector gate voltage

continuous

transient

±20

±30

V

V

I

C25

I

C80

collector current

T

25°C

T

80°C

28

20

A

A

P

tot

total power dissipation

T

25°C

100

W

V

CE(sat)

collector emitter saturation voltage

I

T

25°C

T

1.8

2.1

2.1

V

V

V

GE(th)

gate emitter threshold voltage

I

T

25°C

5.5

6.0

6.5

V

I

CES

collector emitter leakage current

V

T

25°C

T

0.02

0.2

0.2

mA

mA

I

GES

gate emitter leakage current

V

500

nA

Q

G(on)

total gate charge

V

47

nC

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

turn-on delay time

current rise time

turn-off delay time

current fall time

turn-on energy per pulse

turn-off energy per pulse

inductive load

T

V

V

70

40

250

100

1.55

1.7

ns

ns

ns

ns

mJ

mJ

RBSOA

reverse bias safe operating area

V

T

V

45

A

SCSOA

t

SC

I

SC

short circuit safe operating area

short circuit duration

short circuit current

V

T

R

60

10

µs

A

R

thJC

thermal resistance junction to case

(per IGBT)

1.3

K/W

OutputInverterD1-D6

Ratings

Symbol

Definitions

Conditions

min.

typ. max.

Unit

V

RRM

max. repetitve reverse voltage

T

25°C

1200

V

I

F25

I

F80

forward current

T

25°C

T

80°C

33

22

A

A

V

F

forward voltage

I

T

25°C

T

1.95

1.85

2.2

V

V

Q

rr

I

RM

t

rr

E

rec

reverse recovery charge

max. reverse recovery current

reverse recovery time

reverse recovery energy

V

di

T

I

3

20

350

0.7

µC

A

ns

mJ

R

thJC

thermal resistance junction to case

(per diode)

1.5

K/W

T