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MIXA30WB1200TED Datasheet(PDF) 2 Page - IXYS Corporation |
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MIXA30WB1200TED Datasheet(HTML) 2 Page - IXYS Corporation |
2 / 8 page © 2011 IXYS All rights reserved 2 - 8 20110916c MIXA30WB1200TED IXYS reserves the right to change limits, test conditions and dimensions. Ouput Inverter T1 - T6 Ratings Symbol Definitions Conditions min. typ. max. Unit V CES collector emitter voltage T VJ = 25°C 1200 V V GES V GEM max. DC gate voltage max. transient collector gate voltage continuous transient ±20 ±30 V V I C25 I C80 collector current T C = 25°C T C = 80°C 43 30 A A P tot total power dissipation T C = 25°C 150 W V CE(sat) collector emitter saturation voltage I C = 25 A; VGE = 15 V T VJ = 25°C T VJ = 125°C 1.8 2.1 2.1 V V V GE(th) gate emitter threshold voltage I C = 1 mA; VGE = VCE T VJ = 25°C 5.4 6.0 6.5 V I CES collector emitter leakage current V CE = VCES; VGE = 0 V T VJ = 25°C T VJ = 125°C 0.02 0.2 1.5 mA mA I GES gate emitter leakage current V GE = ±20 V 500 nA Q G(on) total gate charge V CE = 600 V; VGE = 15 V; IC = 25 A 76 nC t d(on) t r t d(off) t f E on E off turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load T VJ = 125°C V CE = 600 V; IC = 15 A V GE = ±15 V; RG = 39 W 70 40 250 100 2.5 3.0 ns ns ns ns mJ mJ RBSOA reverse bias safe operating area V GE = ±15 V; RG = 39 W; T VJ = 125°C V CEK = 1200 V 75 A SCSOA t SC I SC short circuit safe operating area short circuit duration short circuit current V CE = 900 V; VGE = ±15 V; T VJ = 125°C R G = 39 W; non-repetitive 100 10 µs A R thJC thermal resistance junction to case (per IGBT) 0.84 K/W Output Inverter D1 - D6 Ratings Symbol Definitions Conditions min. typ. max. Unit V RRM max. repetitve reverse voltage T VJ = 25°C 1200 V I F25 I F80 forward current T C = 25°C T C = 80°C 44 30 A A V F forward voltage I F = 30 A; VGE = 0 V T VJ = 25°C T VJ = 125°C 1.95 1.95 2.2 V V Q rr I RM t rr E rec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy V R = 600 V di F /dt = -600 A/µs T VJ = 125°C I F = 30 A; VGE = 0 V 3.5 30 350 0.9 µC A ns mJ R thJC thermal resistance junction to case (per diode) 1.2 K/W T C = 25°C unless otherwise stated |
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