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HBFP-0420-TR2 Datasheet(PDF) 2 Page - Agilent(Hewlett-Packard) |
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HBFP-0420-TR2 Datasheet(HTML) 2 Page - Agilent(Hewlett-Packard) |
2 / 10 page 2 HBFP-0420 Absolute Maximum Ratings Absolute Symbol Parameter Units Maximum[1] V EBO Emitter-Base Voltage V 1.5 V CBO Collector-Base Voltage V 15.0 V CEO Collector-Emitter Voltage V 4.5 I C Collector Current mA 36 P T Power Dissipation [2] mW 162 T j Junction Temperature °C 150 T STG Storage Temperature °C -65 to 150 Thermal Resistance: θ jc = 300°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. PT limited by maximum ratings. Electrical Specifications, TC = 25°C Symbol Parameters and Test Conditions Units Min. Typ. Max. DC Characteristics BVCEO Collector-Emitter Breakdown Voltage IC = 1 mA, open base V 4.5 ICBO Collector-Cutoff Current VCB = 5 V, IE = 0 nA 150 IEBO Emitter-Base Cutoff Current VEB = 1.5 V, IC = 0 µA15 hFE DC Current Gain VCE = 2 V, IC = 5 mA — 50 80 150 RF Characteristics FMIN Minimum Noise Figure IC = 5 mA, VCE = 2 V, f = 1.8 GHz dB 1.1 1.4 Ga Associated Gain IC = 5 mA, VCE = 2 V, f = 1.8 GHz dB 15.5 17 |S 21| 2 Insertion Power Gain IC = 20 mA, VCE = 2 V, f = 1.8 GHz dB 17 P-1dB Power Output @ 1 dB IC = 20 mA, VCE = 2 V, f = 1.8 GHz dBm 12 Compression Point |
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