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ELM5E400PA-S Datasheet(PDF) 1 Page - ELM Technology Corporation |
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ELM5E400PA-S Datasheet(HTML) 1 Page - ELM Technology Corporation |
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1 / 5 page  1 Ta=25°C. Unless otherwise noted. 5 - ELM5E400PA-S ■General description ■Features ■Maximum absolute ratings ■Pin configuration Parameter Symbol Limit Unit Drain-source voltage Vds 20 V Gate-source voltage Vgs ±12 V Continuous drain current Tj=150°C Ta=25°C Id 0.7 A Ta=70°C 0.4 Pulsed drain current Idm 1.0 A Power dissipation Tc=25°C Pd 0.27 W Tc=70°C 0.16 Junction and storage temperature range Tj, Tstg -55 to 150 °C ELM5E400PA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • Vds=20V • Id=0.7A • Rds(on) = 360mΩ (Vgs=4.5V) • Rds(on) = 420mΩ (Vgs=2.5V) • Rds(on) = 560mΩ (Vgs=1.8V) Single N-channel MOSFET ■Circuit Pin No. Pin name 1 GATE 2 SOURCE 3 DRAIN S G D 1 2 3 SOT-523(TOP VIEW) |
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