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MTB050P10H8-0-T6-G Datasheet(PDF) 5 Page - Cystech Electonics Corp.

Part # MTB050P10H8-0-T6-G
Description  P-Channel Enhancement Mode Power MOSFET
Download  11 Pages
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Manufacturer  CYSTEKEC [Cystech Electonics Corp.]
Direct Link  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTB050P10H8-0-T6-G Datasheet(HTML) 5 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C975H8
Issued Date : 2016.08.01
Revised Date :
Page No. : 5/11
MTB050P10H8
CYStek Product Specification
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
10
100
1000
10000
0
5
10
15
20
25
30
-VDS, Drain-Source Voltage(V)
C oss
Ciss
Crss
Threshold Voltage vs Junction Tempearture
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
ID=-250
μA
ID=-1mA
Maximum Safe Operating Area
0.01
0.1
1
10
100
0.01
0.1
1
10
100
1000
-VDS, Drain-Source Voltage(V)
DC
10ms
100ms
1m
100
μs
RDSON
Limited
TA=25°C, VGS=-10V,Tj=150°C
RθJA=65°C/W, Single Pulse
1s
Gate Charge Characteristics
0
2
4
6
8
10
0
5
10
15
20
25
30
35
40
45
Qg, Total Gate Charge(nC)
ID=-15A
VDS=-80V
Maximum Drain Current vs Junction Temperature
0
1
2
3
4
5
25
50
75
100
125
150
175
Tj, Junction Temperature(°C)
TA=25°C, VGS=-10V,
RθJA=65°C/W
Forward Transfer Admittance vs Drain Current
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
-ID, Drain Current(A)
Pulsed
Ta=25°C
VDS=-10V
VDS=-15V


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