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MTB110P08KJ3 Datasheet(PDF) 1 Page - Cystech Electonics Corp. |
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MTB110P08KJ3 Datasheet(HTML) 1 Page - Cystech Electonics Corp. |
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1 / 9 page  CYStech Electronics Corp. Spec. No. : C123J3 Issued Date : 2016.07.20 Revised Date : Page No. : 1/9 MTB110P08KJ3 CYStek Product Specification P-Channel Enhancement Mode Power MOSFET MTB110P08KJ3 BVDSS -80V ID@VGS=-10V, TC=25°C -11.3A -3.2A ID@VGS=-10V, TA=25°C RDS(ON)@VGS=-10V, ID=-5A 103mΩ(typ) RDS(ON)@VGS=-4.5V, ID=-3A 141mΩ(typ) Features • Low Gate Charge • Simple Drive Requirement • ESD Protected Gate • Pb-free Lead Plating & Halogen-free Package Equivalent Circuit Outline Ordering Information Device Package Shipping MTB110P08KJ3-0-T3-G TO-252 (Pb-free lead plating & halogen-free package) 2500 pcs / Tape & Reel MTB110P08KJ3 TO-252(DPAK) G：Gate G D S D：Drain S：Source Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name |
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