25AA02E48/25AA02E64

DS20002123F-page 2

 2008-2016 Microchip Technology Inc.

1.0

ELECTRICAL CHARACTERISTICS

Storage temperature .................................................................................................................................-65°C to 150°C

Ambient temperature under bias .................................................................................................................-40°C to 85°C

ESD protection on all pins .......................................................................................................................................... 4 kV

TABLE 1-1:

DC CHARACTERISTICS

† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the

device. This is a stress rating only and functional operation of the device at those or any other conditions above those

indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an

extended period of time may affect device reliability.

DC CHARACTERISTICS

Industrial (I):

Param.

No.

Symbol

Characteristic

Min.

Max.

Units

Test Conditions

D1

High-Level Input Voltage

V

D2

Low-Level Input Voltage

-0.3

D3

Low-Level Input Voltage

-0.3

D4

Low-Level Output Voltage

—

0.4

V

D5

Low-Level Output Voltage

—

0.2

V

D6

High-Level Output Voltage

—

V

D7

Input Leakage Current

—

±1

µA

D8

Output Leakage Current

—

±1

µA

D9

Internal Capacitance

(all inputs and outputs)

—7

pF

D10

Operating Current

—

5

mA

SO = Open

—

2.5

mA

SO = Open

D11

—

5

mA

—3

mA

D12

Standby Current

—

1

µA

Note 1: This parameter is periodically sampled and not 100% tested.