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1F12 Datasheet(PDF) 1 Page - Diode Semiconductor Korea |
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1F12 Datasheet(HTML) 1 Page - Diode Semiconductor Korea |
1 / 2 page FEATURES Fast switching R - 1 Diffused junction Low leakage Low forward voltage drop MECHANICAL DATA Case: JEDEC R--1,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.007ounces, 0.20 grams Mounting position: Any Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave, 60Hz,resistive or inductive load. For capacitive load,derate by 20%. UNITS Maximum recurrent peak reverse voltage VRRM V Maximum RMS voltage VRMS V Maximum DC blocking voltage VDC V Maximum average forw ard rectified current 9.5mm lead length, @T A=75 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load T J=125 Maximum instantaneous forw ard voltage @ 0.5 A VF V Maximum reverse current @T A=25 at rated DC blocking voltage @T A=100 Maximum reverse recovery time (NOTE1) trr ns Typical junction capacitance (NOTE2) CJ pF Operating junction temperature range TJ Storage temperature range TSTG 2. Mersured at 1MHZ and applied rev erse v oltage of 4.0V. 15 VOLTAGE RANGE: 1000 --- 2000 V CURRENT: 0.5 A 300 700 840 980 1050 1120 1260 1400 1000 1200 1400 1500 1600 1800 2000 1F10 1F12 1F14 1F15 1F16 1F18 1F20 1000 1200 1400 1500 1600 1800 2000 -55 ---- + 150 IF(AV) μA IFSM IR A A NOTE: 1. Rev erse recov ery test conditions:I F=0.5A,IR=-1.0A,IRR=-0.25A. -55 ---- + 150 Easily cleaned with alcohol,Isopropanol and similar solvents MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 0.5 1F10 --- 1F20 High current capability PHOTO FLASH RECTIFIERS 5.0 100.0 1.8 25.0 Dimensions in millimeters www.diode.kr Diode Semiconductor Korea |
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