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1F12 Datasheet(PDF) 1 Page - Diode Semiconductor Korea

Part # 1F12
Description  PHOTO FLASH RECTIFIERS
Download  2 Pages
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Manufacturer  DSK [Diode Semiconductor Korea]
Direct Link  http://www.diode.kr/
Logo DSK - Diode Semiconductor Korea

1F12 Datasheet(HTML) 1 Page - Diode Semiconductor Korea

  1F12 Datasheet HTML 1Page - Diode Semiconductor Korea 1F12 Datasheet HTML 2Page - Diode Semiconductor Korea  
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FEATURES
Fast switching
R - 1
Diffused junction
Low leakage
Low forward voltage drop
MECHANICAL DATA
Case: JEDEC R--1,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.007ounces, 0.20 grams
Mounting position: Any
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,
60Hz,resistive or inductive load. For capacitive load,derate by 20%.
UNITS
Maximum recurrent peak reverse voltage
VRRM
V
Maximum RMS voltage
VRMS
V
Maximum DC blocking voltage
VDC
V
Maximum average forw ard rectified current
9.5mm lead length,
@T
A=75
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
T
J=125
Maximum instantaneous forw ard voltage
@ 0.5 A
VF
V
Maximum reverse current
@T
A=25
at rated DC blocking voltage @T
A=100
Maximum reverse recovery time
(NOTE1)
trr
ns
Typical junction capacitance
(NOTE2)
CJ
pF
Operating junction temperature range
TJ
Storage temperature range
TSTG
2. Mersured at 1MHZ and applied rev erse v oltage of 4.0V.
15
VOLTAGE RANGE: 1000 --- 2000 V
CURRENT:
0.5 A
300
700
840
980
1050 1120 1260 1400
1000 1200 1400
1500 1600 1800 2000
1F10
1F12 1F14 1F15 1F16 1F18 1F20
1000
1200 1400
1500 1600 1800 2000
-55 ---- + 150
IF(AV)
μA
IFSM
IR
A
A
NOTE: 1. Rev erse recov ery test conditions:I
F=0.5A,IR=-1.0A,IRR=-0.25A.
-55 ---- + 150
Easily cleaned with alcohol,Isopropanol and
similar solvents
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
0.5
1F10 --- 1F20
High current capability
PHOTO FLASH RECTIFIERS
5.0
100.0
1.8
25.0
Dimensions in millimeters
www.diode.kr
Diode Semiconductor Korea


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