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1N5061 Datasheet(PDF) 1 Page - Diode Semiconductor Korea

Part # 1N5061
Description  PLASTIC SILICON RECTIFIERS
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Manufacturer  DSK [Diode Semiconductor Korea]
Direct Link  http://www.diode.kr/
Logo DSK - Diode Semiconductor Korea

1N5061 Datasheet(HTML) 1 Page - Diode Semiconductor Korea

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FEATURES
Low cost
Diffused junction
Glass passivated chips
and similar solvents
MECHANICAL DATA
Case: JEDEC DO-15, m olded plastic
-202,Method 208
Mounting: Any
Ratings at 25
ambient tem perature unless otherwise specified.
Single phase,half wave,50 Hz,resistive or inductive load. For capacitive load,derate by 20%.
Maximum recurrent peak reverse voltage
VRRM
V
Maximum RMS voltage
VRMS
V
Maximum DC blocking voltage
VDC
V
Maximum average forw ard rectified current
9.5mm lead length, @T
A=50
Peak forw ard surge current
10ms single half-sine-w ave
superimposed on rated load
@T
J=125
Maximum instantaneous
@1.0A
forw ard voltage
@ 2.5A
VF
V
Maximum reverse current
@T
A=25
at rated DC blocking voltage @T
A=150
Maximum reverse recovery time
(Note1)
trr
µ s
Typical junction capacitance
(Note2)
C
Typical thermal resistance
(Note3)
RθJA
K/W
Operating junction temperature range
TJ
Storage temperature range
TSTG
3. Thermal resistance from junction to ambient.
1N5059
1N5060
1N5061
1N5062
2
00
400
600
800
A
UNITS
200
400
600
800
IF(AV)
140
280
420
560
1N5059---1N5062
PLASTIC SILICON RECTIFIERS
VOLT AGE RANGE: 200---800 V
CURRENT : 2.0 A
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
DO - 15
Low forward voltage drop
High crrent capability
Easily cleaned with Freon,Alcohol, lsopropand
Polarity: Color band denotes cathode
Weight: 0.014 ounces, 0.39gram s
A
- 55 ----- + 175
NOTE: 1.Measured with IF=0.5A, IR=1A, Irr=0.25A.
2. Measured at 1.0MHZ and applied rev erse v oltage of 0V DC.
- 55 ----- + 175
4.0
1.2
40
45
Term inals: Axial leads,solderable per MIL-STD
A
IR
IFSM
100
5.0
2
.0
5
0.0
1.15
pF
J
Dimensions in millimeters
Diode Semiconductor Korea
www.diode.kr


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