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1N5061 Datasheet(PDF) 1 Page - Diode Semiconductor Korea |
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1N5061 Datasheet(HTML) 1 Page - Diode Semiconductor Korea |
1 / 2 page FEATURES Low cost Diffused junction Glass passivated chips and similar solvents MECHANICAL DATA Case: JEDEC DO-15, m olded plastic -202,Method 208 Mounting: Any Ratings at 25 ambient tem perature unless otherwise specified. Single phase,half wave,50 Hz,resistive or inductive load. For capacitive load,derate by 20%. Maximum recurrent peak reverse voltage VRRM V Maximum RMS voltage VRMS V Maximum DC blocking voltage VDC V Maximum average forw ard rectified current 9.5mm lead length, @T A=50 Peak forw ard surge current 10ms single half-sine-w ave superimposed on rated load @T J=125 Maximum instantaneous @1.0A forw ard voltage @ 2.5A VF V Maximum reverse current @T A=25 at rated DC blocking voltage @T A=150 Maximum reverse recovery time (Note1) trr µ s Typical junction capacitance (Note2) C Typical thermal resistance (Note3) RθJA K/W Operating junction temperature range TJ Storage temperature range TSTG 3. Thermal resistance from junction to ambient. 1N5059 1N5060 1N5061 1N5062 2 00 400 600 800 A UNITS 200 400 600 800 IF(AV) 140 280 420 560 1N5059---1N5062 PLASTIC SILICON RECTIFIERS VOLT AGE RANGE: 200---800 V CURRENT : 2.0 A MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS DO - 15 Low forward voltage drop High crrent capability Easily cleaned with Freon,Alcohol, lsopropand Polarity: Color band denotes cathode Weight: 0.014 ounces, 0.39gram s A - 55 ----- + 175 NOTE: 1.Measured with IF=0.5A, IR=1A, Irr=0.25A. 2. Measured at 1.0MHZ and applied rev erse v oltage of 0V DC. - 55 ----- + 175 4.0 1.2 40 45 Term inals: Axial leads,solderable per MIL-STD A IR IFSM 100 5.0 2 .0 5 0.0 1.15 pF J Dimensions in millimeters Diode Semiconductor Korea www.diode.kr |
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