PMD18K80

PMD18K100

MAXIMUM RATINGS: (TC=25°C)

SYMBOL

PMD19K80

PMD19K100

UNITS

Collector-Base Voltage

VCBO

80

100

V

Collector-Emitter Voltage

VCER

80

100

V

Collector-Emitter Voltage

VCEO

80

100

V

Emitter-Base Voltage

VEBO

5.0

V

Continuous Collector Current

IC

30

A

Peak Collector Current

ICM

60

A

Continuous Base Current

IB

750

mA

Power Dissipation (TC=50°C)

PD

240

W

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +200

°C

Thermal Resistance

JC

0.625

°C/W

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICER

VCE=54V, RBE=2.2kΩ (PMD18K, 19K80)

10

mA

ICER

VCE=67V, RBE=2.2kΩ (PMD18K, 19K100)

10

mA

IEBO

VEB=5.0V

3.0

mA

BVCER

IC=100mA, RBE=2.2kΩ (PMD18K, 19K80)

80

V

BVCER

IC=100mA, RBE=2.2kΩ (PMD18K, 19K100) 100

V

BVCEO

IC=100mA (PMD18K, 19K80)

80

V

BVCEO

IC=100mA (PMD18K, 19K100)

100

V

VCE(SAT) IC=15A, IB=60mA

2.0

V

VBE(SAT) IC=15A, IB=60mA

2.8

V

VBE(ON)

VCE=3.0V, IC=15A

2.8

V

hFE

VCE=3.0V, IC=15A (PMD18K series)

1.0K

20K

hFE

VCE=3.0V, IC=15A (PMD19K series)

800

20K

hfe

VCE=3.0V, IC=9.0A, f=1.0kHz

300

fT

VCE=3.0V, IC=9.0A, f=1.0MHz

4.0

MHz

Cob

VCB=10V, IE=0, f=1.0MHz

600

pF

PMD18K SERIES

NPN

PMD19K SERIES

PNP

COMPLEMENTARY SILICON

DARLINGTON POWER

TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR PMD18K, PMD19K

series types are complementary silicon Darlington

power transistors, manufactured by the epitaxial base

process, designed for power switching applications.

These devices are designed to be electrical/mechanical

equivalents to Lambda part numbers.

MARKING: FULL PART NUMBER

TO-3 CASE

R1 (2-October 2012)

www.centr a lsemi.com