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DN2535 Datasheet(PDF) 1 Page - Supertex, Inc |
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DN2535 Datasheet(HTML) 1 Page - Supertex, Inc |
1 / 6 page Supertex inc. Supertex inc. www.supertex.com DN2535 Doc.# DSFP-DN2535 B062813 L = Lot Number YY = Year Sealed WW = Week Sealed = “Green” Packaging DN2535N5 LLLLLLLLL YYWW Features ► High input impedance ► Low input capacitance ► Fast switching speeds ► Low on-resistance ► Free from secondary breakdown ► Low input and output leakage Applications ► Normally-on switches ► Solid state relays ► Converters ► Linear amplifiers ► Constant current sources ► Power supply circuits ► Telecom General Description The Supertex DN2535 is a low threshold depletion mode (normally-on) transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. N-Channel Depletion-Mode Vertical DMOS FETs Absolute Maximum Ratings Parameter Value Drain-to-source voltage BV DSX Drain-to-gate voltage BV DGX Gate-to-source voltage ±20V Operating and storage temperature -55OC to +150OC Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. Pin Configuration Product Marking 3-Lead TO-220 3-Lead TO-92 YY = Year Sealed WW = Week Sealed = “Green” Packaging Si DN 2535 YYWW 3-Lead TO-220 3-Lead TO-92 Package may or may not include the following marks: Si or Package may or may not include the following marks: Si or GATE SOURCE DRAIN GATE SOURCE DRAIN DRAIN Typical Thermal Resistance Package θ ja TO-92 132OC/W TO-220 29OC/W Ordering Information Part Number Package Option Packing DN2535N3-G TO-92 1000/Bag DN2535N3-G P002 TO-92 2000/Reel DN2535N3-G P003 DN2535N3-G P005 DN2535N3-G P013 DN2535N3-G P014 DN2535N5-G TO-220 50/Tube Product Summary BV DSX/BVDGX R DS(ON) (max) I DSS (min) 350V 25Ω 150mA -G denotes a lead (Pb)-free / RoHS compliant package. Contact factory for Wafer / Die availablity. Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant. |
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Similar Description - DN2535_13 |
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