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ERB38-04 Datasheet(PDF) 1 Page - Diode Semiconductor Korea |
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ERB38-04 Datasheet(HTML) 1 Page - Diode Semiconductor Korea |
1 / 2 page FEATURES Low cost Diffused junction Low leakage Low forward voltage drop High current capability MECHANICAL DATA Case:JEDEC DO--41,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.012 ounces,0.34 grams Mounting position: Any Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. UNITS Maximum recurrent peak reverse voltage VRRM V Maximum RMS voltage VRMS V Maximum DC blocking voltage VDC V Maximum average forw ard rectified current 9.5mm lead length, @T A=75 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @T J=125 Maximum instantaneous forw ard voltage @ 0.8A VF V Maximum reverse current @T A=25 at rated DC blocking voltage @T A=100 Maximum reverse recovery time (Note1) trr ns Typical junction capacitance (Note2) CJ pF Typical thermal resistance (Note3) RθJA /W Operating junction temperature range TJ Storage temperature range TSTG Easily cleaned with alcohol,Isopropanol and similar solvents 20 ERB38-04 --- ERB38-06 ERB38 - 04 ERB38 - 05 ERB38 - 06 HIGH EFFICIENCY RECTIFIER VOLTAGE RANGE: 400 --- 600 V CURRENT: 0.8 A DO - 41 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 280 3. Thermal resistance f rom junction to ambient. A 20.0 IR IFSM NOTE: 1. Measured with I F=0.5A, IR=1A, Irr=0.25A. 2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V DC. - 55 ----- + 150 - 55 ----- + 150 600 350 500 420 A 5.0 50.0 A 2.5 0.8 15 60 400 50 600 IF(AV) The plastic material carries U/L recognition 94V-0 400 500 Dimensions in millimeters www.diode.kr Diode Semiconductor Korea |
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