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LP2954A Datasheet(PDF) 4 Page - Texas Instruments |
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LP2954A Datasheet(HTML) 4 Page - Texas Instruments |
4 / 28 page 4 LP2954, LP2954A SNVS096E – JUNE 1999 – REVISED JULY 2016 www.ti.com Product Folder Links: LP2954 LP2954A Submit Documentation Feedback Copyright © 1999–2016, Texas Instruments Incorporated (1) At elevated temperatures, device power dissipation must be derated based on package thermal resistance and heat sink values (if a heat sink is used). If power dissipation causes the junction temperature to exceed specified limits, the device goes into thermal shutdown. (2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and specifications. 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) (2) MIN MAX UNIT Input supply voltage –20 30 V Power dissipation(1) Internally Limited Storage temperature, Tstg –65 150 °C (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT Operating junction temperature –40 125 °C (1) For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics. (2) Thermal resistance value RθJA is based on the EIA/JEDEC High-K printed circuit board defined by JESD51-7 - High Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages. (3) The TO-220 (NDE) package is vertically mounted in center of JEDEC High-K test board (JESD 51-7) with no additional heat sink. This is a through-hole package; this is NOT a surface mount package. 6.4 Thermal Information THERMAL METRIC(1) LP2954, LP2954A UNIT KTT (DDPAK/TO-263) NDE (TO-220) D (SOIC) 3 PINS 3 PINS 8 PINS RθJA (2) Junction-to-ambient thermal resistance, High-K 44.3 80.3(3) 105.0 °C/W RθJC(top) Junction-to-case (top) thermal resistance 44.8 38.6 47.3 °C/W RθJB Junction-to-board thermal resistance 23.8 73.1 45.8 °C/W ψJT Junction-to-top characterization parameter 10.6 13.5 6.2 °C/W ψJB Junction-to-board characterization parameter 22.7 73.1 45.2 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance 1.0 0.9 — °C/W |
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