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LMV715-N Datasheet(PDF) 4 Page - Texas Instruments

Part # LMV715-N
Description  Low-Power, RRIO Operational Amplifiers With High Output Current Drive and Shutdown Option
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

LMV715-N Datasheet(HTML) 4 Page - Texas Instruments

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LMV710-N, LMV711-N, LMV715-N
SNOS519K – APRIL 2000 – REVISED AUGUST 2016
www.ti.com
Product Folder Links: LMV710-N LMV715-N
Submit Documentation Feedback
Copyright © 2000–2016, Texas Instruments Incorporated
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
(3)
Shorting circuit output to V+ will adversely affect reliability.
(4)
Shorting circuit output to Vwill adversely affect reliability.
(5)
The maximum power dissipation is a function of TJ(MAX), RθJA, and TA. The maximum allowable power dissipation at any ambient
temperature is PD = (TJ(MAX) – T A) / RθJA. All numbers apply for packages soldered directly into a PCB.
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1) (2)
MIN
MAX
UNIT
Differential input voltage
±Supply voltage
Voltage at input or output pin
(V)
− 0.4
(V+) + 0.4
V
Supply voltage (V+ - V )
5.5
V
Output short circuit to V+
See(3)
Output short circuit to V
See(4)
Current at input pin
±10
mA
Mounting temperature, infrared or convection (20 sec)
235
°C
Junction temperature, TJ(MAX)
(5)
150
°C
Storage temperature, Tstg
–65
150
°C
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
Human-body model, 1.5 kΩ in series with 100 pF.
(3)
Machine model, 0 Ω in series with 100 pF.
6.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human-body model (HBM)(1)(2)
±2000
V
Machine model (MM)(3)
±100
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
UNIT
Supply voltage
2.7
5
V
Temperature
–40
85
°C
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.4 Thermal Information
THERMAL METRIC(1)
LMV710-N
LMV711-N
LMV715-N
UNIT
DBV (SOT-23)
DBV (SOT-23)
DBV (SOT-23)
5 PINS
6 PINS
6 PINS
RθJA
Junction-to-ambient thermal resistance
265
265
265
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
131.6
139
156.6
°C/W
RθJB
Junction-to-board thermal resistance
35.1
38.5
32.8
°C/W
ψJT
Junction-to-top characterization parameter
22.2
28.6
34
°C/W
ψJB
Junction-to-board characterization parameter
34.5
37.9
32.2
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
°C/W


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