8K x 8 Power-Switched and Reprogrammable PROM
CY7C261
CY7C263/CY7C264
Cypress Semiconductor Corporation
•
3901 North First Street
•
San Jose
•
CA 95134
•
408-943-2600
Document #: 38-04010 Rev. *B
Revised December 28, 2002
1
Features
• CMOS for optimum speed/power
• Windowed for reprogrammability
• High speed
— 20 ns (Commercial)
— 25 ns (Military)
• Low power
— 660 mW (Commercial)
— 770 mW (Military)
• Super low standby power (7C261)
— Less than 220 mW when deselected
— Fast access: 20 ns
• EPROM technology 100% programmable
• Slim 300-mil or standard 600-mil packaging available
• 5V
± 10% V
CC, commercial and military
• Capable of withstanding greater than 2001V static
discharge
• TTL-compatible I/O
• Direct replacement for bipolar PROMs
Functional Description
The CY7C261, CY7C263, and CY7C264 are high-perfor-
mance 8192-word by 8-bit CMOS PROMs. When deselected,
the CY7C261 automatically powers down into a low-power
standby mode. It is packaged in a 300-mil-wide package. The
CY7C263 and CY7C264 are packaged in 300-mil-wide and
600-mil-wide packages respectively, and do not power down
when
deselected.
The
reprogrammable
packages
are
equipped with an erasure window; when exposed to UV light,
these PROMs are erased and can then be reprogrammed.
The memory cells utilize proven EPROM floating-gate
technology and byte-wide intelligent programming algorithms.
The CY7C261, CY7C263, and CY7C264 are plug-in replace-
ments for bipolar devices and offer the advantages of lower
power, superior performance and programming yield. The
EPROM cell requires only 12.5V for the supervoltage and low
current requirements allow for gang programming. The
EPROM cells allow for each memory location to be tested
100%, as each location is written into, erased, and repeatedly
exercised prior to encapsulation. Each PROM is also tested
for AC performance to guarantee that after customer
programming the product will meet DC and AC specification
limits.
Read is accomplished by placing an active LOW signal on CS.
The contents of the memory location addressed by the
address line (A0−A12) will become available on the output lines
(O0−O7).
For an 8K x 8 Registered PROM, see theCY7C265.
Logic Block Diagram
Pin Configurations
O7
O6
O5
O4
O3
O2
O1
O0
ADDRESS
DECODER
PROGRAM-
MABLE
ARRAY
COLUMN
MULTI-
PLEXER
POWER DOWN
(7C261)
A0
A1
A2
A3
A4
A5
A6
A8
A9
A10
A11
A12
CS
GND
1
2
3
4
5
6
7
8
9
10
11
14
15
16
20
19
18
17
21
24
23
22
Top View
DIP/Flatpack
A6
A5
A4
A3
A2
A1
A0
O0
A7
O3
VCC
A8
A9
A10
O7
O6
O5
O4
CS
O2
12
13
O1
A12
A11
28
4
5
6
7
8
9
10
32 1
27
1314151617
26
25
24
23
22
21
20
11
12
19
O0
Top View
18
NC
A0
A4
A3
A10
NC
CS
A11
O7
O6
7C261
7C263
7C264
7C261
7C263
A7
A2
A1
A12
COLUMN
ADDRESS
ROW
ADDRESS
LCC/PLCC (OpaqueOnly)
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