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TLC25M4BCD Datasheet(PDF) 2 Page - Texas Instruments |
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TLC25M4BCD Datasheet(HTML) 2 Page - Texas Instruments |
2 / 28 page TLC254, TLC254A, TLC254B, TLC254Y, TLC25L4, TLC25L4A, TLC25L4B TLC25L4Y, TLC25M4, TLC25M4A, TLC25M4B, TLC25M4Y LinCMOS QUAD OPERATIONAL AMPLIFIERS SLOS003G – JUNE 1983 – REVISED MARCH 2001 2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 description (continued) General applications such as transducer interfacing, analog calculations, amplifier blocks, active filters, and signal buffering are all easily designed with these devices. Remote and inaccessible equipment applications are possible using their low-voltage and low-power capabilities. These devices are well suited to solve the difficult problems associated with single-battery and solar-cell-powered applications. This series includes devices that are characterized for the commercial temperature range and are available in 14-pin plastic dip and the small-outline packages. The device is also available in chip form. These devices are characterized for operation from 0 °C to 70°C. DEVICE FEATURES PARAMETER TLC25L4_C (LOW BIAS) TLC25M4_C (MEDIUM BIAS) TLC254_C (HIGH BIAS) Supply current (Typ) 40 µA 600 µA 4000 µA Slew rate (Typ) 0.04 V/ µA 0.6 V/ µA 4.5 V/ µA Input offset voltage (Max) TLC254C, TLC25L4C, TLC25M4C TLC254AC, TLC25L4AC, TLC25M4AC TLC254BC, TLC25L4BC, TLC25M4BC 10 mV 5 mV 2 mV 10 mV 5 mV 2 mV 10 mV 5 mV 2 mV Offset voltage drift (Typ) 0.1 µV/month† 0.1 µV/month† 0.1 µV/month† Offset voltage temperature coefficient (Typ) 0.7 µV/°C 2 µV/°C 5 µV/°C Input bias current (Typ) 1 pA 1 pA 1 pA Input offset current (Typ) 1 pA 1 pA 1 pA † The long-term drift value applies after the first month. equivalent schematic (each amplifier) VDD IN + IN – VDD – /GND OUT ESD- Protective Network ESD- Protective Network |
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