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MBR1550CT Datasheet(PDF) 1 Page - Diode Semiconductor Korea |
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MBR1550CT Datasheet(HTML) 1 Page - Diode Semiconductor Korea |
1 / 2 page 1 3 2 10.2± 0.2 φ 3.8± 0.15 PIN 0.9± 0.1 2.5± 0.1 2.6± 0.2 0.5± 0.1 1.4± 0.2 4.5± 0.2 PIN 1 PIN 3 CASE PIN 2 Positive CT Negative CT Suffix "A" CASE PIN 2 PIN 3 PIN 1 PIN 1 PIN 3 CASE PIN 2 Doubler Suffix "D" Dimensions in millimeters FEATURES MECHANICAL DATA Position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 am bient tem perature unless otherwise specified. UNITS Maximum recurrent peak reverse voltage VRRM V Maximum RMS Voltage VRMS V Maximum DC blocking voltage VDC V Maximum average forw ard total device m rectified current @T C = 105°C IF(AV) A Peak forw ard surge current 8.3ms single half b sine-w ave superimposed on rated load IFSM A Maximum forward (IF=7.5A,TC=25 ) voltage (I F=7.5A ,TC=125 ) (Note 1) (I F=15A ,TC=25 ) Maximum reverse current @T C=25 at rated DC blocking voltage @T C=125 Maximum thermal resistance (Note2) R θJC /W Operating junction temperature range TJ Storage temperature range TSTG 2. Thermal resistance from junction to case. m A 30 35 40 45 50 60 80 100 15 150 21 25 28 32 35 42 56 70 30 35 40 45 50 60 80 100 VOLTAGE RANGE: 30 - 100 V CURRENT: 15 A Metal silicon junction, m ajority carrier conduction. Case:JEDEC TO-220AB,m olded plastic body SCHOTTKY BARRIER RECTIFIERS High current capacity, low forward voltage drop. NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle. - 55 ---- + 150 - 55 ---- + 150 Term inals:Leads, solderable per MIL-STD-750, 1 1 Method 2026 IR VF 0.1 1.0 0.1 3.0 TO-220AB MBR1530CT---MBR15100CT MBR MBR MBR MBR MBR MBR MBR MBR 1530CT 1535CT 1540CT 1545CT 1550CT 1560CT 1580CT 15100CT Guard ring for over voltage protection. High surge capacity. For use in low voltage, high frequency inverters, free 111wheeling, and polarity protection applications. Polarity: As m arked Weight: 0.071ounce, 2.006 grams 15 50 6.0 V 0.57 0.84 0.75 0.80 0.65 - - - - Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%. 3) 3.TC=100 (IF=15A,TC=125 ) 0.72 - - Diode Semiconductor Korea www.diode.kr |
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