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MBR2080CT Datasheet(PDF) 1 Page - Diode Semiconductor Korea |
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MBR2080CT Datasheet(HTML) 1 Page - Diode Semiconductor Korea |
1 / 2 page 1 3 2 10.2± 0.2 φ 3.8± 0.15 PIN 0.9± 0.1 2.5± 0.1 2.6± 0.2 0.5± 0.1 1.4± 0.2 4.5± 0.2 PIN 1 PIN 3 CASE PIN 2 Positive CT Negative CT Suffix "A" CASE PIN 2 PIN 3 PIN 1 PIN 1 PIN 3 CASE PIN 2 Doubler Suffix "D" Dimensions in millimeters FEATURES MECHANICAL DATA Position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. UNITS Maximumrecurrent peak reverse voltage VRRM V Maximumworking peak reverse voltage VRWM V MaximumDC blocking voltage VDC V Maximumaverage forw ard total device1 111rectified current @ T C = 133 IF(AV) A Peak forw ard surge current 8.3 ms single half b sine-wave superimposed on rated load IFSM A Maximumforward (I F=10A,TC=25 ) voltage per leg (I F=10A,TC=125 ) (NOTE1) (I F=20A,TC=25 ) (I F=20A,TC=125 ) Maximumreverse current @T A=25 at rated DCblocking voltage @T A=125 Maximum junction capacitance (NOTE2) CT pF Operating junction temperature range TJ Storage temperature range TSTG 2. VR=5VDC,(test signal range 100KHz to 1MHz 63 70 70 80 150.0 TO-220AB 20.0 90 100 49 56 MBR20 100CT 70 80 90 100 MBR20 80CT MBR2090CT mA 0. 70 0. 95 0. 85 0.1 NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle. - 55 ---- + 175 - 55 ---- + 150 VOLTAGE RANGE: 70 - 100 V CURRENT: 20 A Metal silicon junction, majoritycarrier conduction. Case:JEDEC TO-220AB,molded plastic body Terminals: Solderable per MIL-STD-750, 11 Method 2026 DUAL SCHOTTKY RECTIFIERS V 6.0 MBR2070CT---MBR20100CT MBR20 70CT Guard ring for over voltage protection. High surge capacity. For use in low voltage, high frequencyinverters, free 111 wheeling, and polarityprotection applications. Polarity: As marked Weight: 0.0 71 ounce, 2.006 grams High current capacity, low forward voltage drop. 400 VF 0. 85 IR Diode Semiconductor Korea www.diode.kr |
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