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MBR3080CT Datasheet(PDF) 1 Page - Diode Semiconductor Korea

Part # MBR3080CT
Description  SCHOTTKY BARRIER RECTIFIERS
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Manufacturer  DSK [Diode Semiconductor Korea]
Direct Link  http://www.diode.kr/
Logo DSK - Diode Semiconductor Korea

MBR3080CT Datasheet(HTML) 1 Page - Diode Semiconductor Korea

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1
3
2
10.2± 0.2
φ 3.8± 0.15
PIN
0.9± 0.1
2.5± 0.1
2.6± 0.2
0.5± 0.1
1.4± 0.2
4.5± 0.2
PIN 1
PIN 3
CASE
PIN 2
Positive CT
Negative CT
Suffix "A"
CASE
PIN 2
PIN 3
PIN 1
PIN 1
PIN 3
CASE
PIN 2
Doubler
Suffix "D"
FEATURES
MECHANICAL DATA
Position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unless otherwise specified.
UNITS
Maximum recurrent peak reverse voltage
VRRM
V
Maximum RMS Voltage
VRMS
V
Maximum DC blocking voltage
VDC
V
Maximum average forw ard total device
m rectified current @T
C = 105°C
IF(AV)
A
Peak forw ard surge current 8.3ms single half
b sine-w ave superimposed on rated load
IFSM
A
Maximum forward
(IF=15A,TC=25
)
(I F=15A,TC=125
)
voltage
(IF=30A,TC=25
)
(Note 1)
(I F=30A,TC=125 )
Maximum reverse current
@T
C=25
at rated DC blocking voltage
@T
C=125
Maximum thermal resistance (Note2)
R θJC
/W
Operating junction temperature range
TJ
Storage temperature range
TSTG
2. Thermal resistance from junction to case.
m A
30
35
40
45
50
60
80
100
3
0
200
21
25
28
32
35
42
56
70
30
35
40
45
50
60
80
100
VOLTAGE RANGE: 30 - 100 V
CURRENT: 30 A
Metal silicon junction, m ajority carrier conduction.
Case:JEDEC TO-220AB,m olded plastic body
SCHOTTKY BARRIER RECTIFIERS
High current capacity, low forward voltage drop.
NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.
-
55 ---- + 150
-
55 ---- + 150
Term inals:Solderable per MIL-STD-750,
1 1
Method 2026
IR
VF
1.0
0.2
6.8
4.4
TO-220AB
MBR3030CT---MBR30100CT
MBR
MBR
MBR
MBR
MBR
MBR
MBR
MBR
3
030CT 3035CT 3040CT 3045CT 3050CT 3060CT 3080CT30100CT
Guard ring for over voltage protection.
High surge capacity.
For use in low voltage, high frequency inverters, free
111wheeling, and polarity protection applications.
Polarity: As m arked
Weight: 0.071ounce, 2.006 grams
60
40
V
0.57
0.70
0.65
-
0.80
0.85
Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.
Dimensions in millimeters
0.84
0.95
0.95
0.72
0.85
0.75
Diode Semiconductor Korea
www.diode.kr


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