FEATURES

Metal-semiconductor junction with guard ring

Epitaxial construction

Low forward voltage drop,low switching losses

High surge capability

MECHANICAL DATA

Case:JEDEC DO--27,molded plastic

Terminals: Axial lead ,solderable per

MIL- STD-750,Method 2026

Polarity: Color band denotes cathode

Weight: 0.041ounces,1.15 grams

Mounting position: Any

Ratings at 25

ambient temperature unless otherwise specified.

Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.

SB530 SB540 SB550 SB560 SB570 SB580 SB590 SB5A0 UNITS

Maximum recurrent peak reverse voltage

30

40

50

60

70

80

90

100

V

Maximum RMS voltage

21

28

35

42

49

56

63

70

V

Maximum DC blocking voltage

30

40

50

60

70

80

90

100

V

Maximum average forw ard rectified current

9.5mm lead length,

(see fig.1)

Peak forw ard surge current

8.3ms single half-sine-w ave

superimposed on rated load

@T

Maximum reverse current

@T

at rated DC blocking voltage

@T

Typical junction capacitance

(Note2)

pF

Typical thermal resistance

(Note3)

/W

Operating junction temperature range

Storage temperature range

- 55 ---- + 125

- 55 ---- + 150

500

400

Maximum instantaneous forw ard voltage

@ 5.0A (Note 1)

2.5

50.0

25.0

V

0.55

0.7

0.85

150.0

20

SB520

14

20

5.0

3.Thermal resistance junction to ambient

mA

NOTE: 1. Pulse test:300us pulse width,1% duty cy cle.

2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.

A

25

- 55 ---- +150

SB520 --- SB5A0

A

For use in low voltage,high frequency inverters free

wheeling,and polarity protection applications

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE RANGE: 20 --- 100 V

CURRENT: 5.0A

DO - 27

The plastic material carries U/L recognition 94V-0

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Dimensions in millimeters

Diode Semiconductor Korea

www.diode.kr