MR16R16228DF0 datasheet(6/16 Pages) SAMSUNG

Part #	MR16R16228DF0

Description	Key Timing Parameters

Download	16 Pages

Scroll/Zoom	100%

Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

Logo

6 / 16 page

Page 5

Version 1.0 July 2002

MR16R1622(4/8/G)DF0

MR18R1622(4/8/G)DF0

SIO0

SIO1

SCK

CMD

Vref

RDRAM Device(256/288Mb)

U1

Vdd

Gnd

2 per

RDRAM device

SCL

SDA

A0 A1

SCL

SA0

SA1

SDA

Serial Presence Detect

Note 1. Rambus Channel signals form a loop through

the RIMM module, with the exception of the SIO chain.

SIO0

SIO1

SCK

CMD

Vref

RDRAM Device(256/288Mb)

SIO0

SIO1

SCK

CMD

Vref

RDRAM Device(256/288Mb)

SIO0

SIO1

SCK

CMD

Vref

RDRAM Device(256/288Mb)

VREF

Gnd

1 per

2 RDRAM devices

VCMOS

Gnd

1 per

2 RDRAM devices

A2

SA2

WP

SWP

U0

Vcc

SVDD

0.22/0.1

µFa

0.22/0.1

µFa

0.22/0.1

µFa

SVDD

Gnd

Plus one

Near Connector

47K

Ω

U2

U3

UN

•

Note 2. See Serial Presence Detection Specification for

information on the SPD device and its contents.

Module

Capacity

N

512/576MB

16

256/288MB

8

128/144MB

4

64/72MB

2

0.22/0.1

µFa

a .

∗ 0.1 µF : 800MHz products

for 64/72MB, 128/144MB and

256/288MB

∗ 0.22 µF : the other products

Figure 2: RIMM Module Functional Diagram

Similar Part No. - MR16R16228DF0

Manufacturer	Part #	Datasheet	Description
Samsung semiconductor	MR16R1622AF0	419Kb / 16P	(16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V
	MR16R1622AF0-CK8	419Kb / 16P	(16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V
	MR16R1622AF0-CM8	419Kb / 16P	(16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V

More results

Similar Description - MR16R16228DF0

Manufacturer	Part #	Datasheet	Description
Samsung semiconductor	MR18R1624GEG0	442Kb / 16P	Key Timing Parameters
Infineon Technologies A...	IDP08E65D1	1Mb / 11P	Temperature stable behaviour of key parameters Rev.2.2,2013-12-16
Kersemi Electronic Co.,...	IRFB4019	831Kb / 7P	Key Parameters Optimized for Class-D Audio
International Rectifier	IRFS5615PBF	351Kb / 9P	Key Parameters Optimized for Class-D Audio
National Semiconductor ...	DS90UR241	162Kb / 4P	Spread Spectrum Tolerance Support Three key parameters, frequency
International Rectifier	IRF7665S2PBF	253Kb / 9P	Key parameters optimized for Class-D audio amplifier applications
International Rectifier	IRFS5615PBF	351Kb / 9P	Key Parameters Optimized for Class-D Audio Amplifier Applications
Kersemi Electronic Co.,...	IRFB4212	832Kb / 7P	Key parameters optimized for Class-D audio amplifier applications
Kersemi Electronic Co.,...	IRFB4212PBF	832Kb / 7P	Key parameters optimized for Class-D audio amplifier applications
International Rectifier	IRFS4020PBF	337Kb / 9P	Key parameters optimized for Class-D audio amplifier applications

More results

MR16R16228DF0 Datasheet(PDF) 6 Page - Samsung semiconductor

MR16R16228DF0 Datasheet(HTML) 6 Page - Samsung semiconductor

Similar Part No. - MR16R16228DF0

Similar Description - MR16R16228DF0

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

Datasheet Download

Link URL