MTD10N10ELT4 datasheet(1/8 Pages) ONSEMI

Part #	MTD10N10ELT4

Description	TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount

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Manufacturer	ONSEMI [ON Semiconductor]

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March, 2004 − Rev. 1

1

Publication Order Number:

MTD10N10EL/D

MTD10N10EL

TMOS E−FET™

Power Field Effect Transistor

DPAK for Surface Mount

N−Channel Enhancement−Mode Silicon

Gate

This advanced TMOS E−FET is designed to withstand high energy

in the avalanche and commutation modes. The new energy efficient

design also offers a drain−to−source diode with a fast recovery time.

Designed for low voltage, high speed switching applications in power

supplies, converters and PWM motor controls, these devices are

particularly well suited for bridge circuits where diode speed and

commutating safe operating areas are critical and offer additional

safety margin against unexpected voltage transients.

Features

• Avalanche Energy Specified

• Source−to−Drain Diode Recovery Time Comparable to a Discrete

Fast Recovery Diode

• Diode is Characterized for Use in Bridge Circuits

• I

DSS and VDS(on) Specified at Elevated Temperature

• Surface Mount Package Available in 16 mm, 13−inch/2500

Unit Tape & Reel, Add T4 Suffix to Part Number

MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

100

Vdc

Drain−to−Gate Voltage (RGS = 1.0 MΩ)

VDGR

100

Vdc

Gate−to−Source Voltage — Continuous

— Non−Repetitive (tp ≤ 10 ms)

VGS

VGSM

±15

±20

Vdc

Vpk

Drain Current — Continuous

Drain Current — Continuous @ 100

°C

Drain Current — Single Pulse (tp ≤ 10 µs)

ID

IDM

10

6.0

35

Adc

Apk

Total Power Dissipation @ TC = 25°C

Derate above 25

°C

Total Power Dissipation @ TA = 25°C (Note 2)

PD

40

0.32

1.75

Watts

W/

°C

Watts

Operating and Storage Temperature Range

TJ, Tstg

− 55 to

150

°C

Single Pulse Drain−to−Source Avalanche

Energy — Starting TJ = 25°C

(VDD = 25 Vdc, VGS = 5.0 Vdc, IL = 10 Apk,

L = 1.0 mH, RG =25 Ω)

EAS

50

mJ

Thermal Resistance — Junction to Case

— Junction to Ambient (Note 1)

— Junction to Ambient (Note 2)

RθJC

RθJA

3.13

100

71.4

°C/W

Maximum Temperature for Soldering

Purposes, 1/8

″ from case for 10 seconds

TL

260

°C

1. When surface mounted to an FR4 board using minimum recommended pad size.

2. When surface mounted to an FR4 board using 0.5 sq in pad size.

http://onsemi.com

MARKING DIAGRAM

& PIN ASSIGNMENTS

10N10EL=Device Code

Y

= Year

WW

= Work Week

D

S

G

VDSS

RDS(ON) TYP

ID MAX

100 V

0.22

Ω

10 A

N−Channel

1

Gate

3

Source

2

Drain

4

Drain

Device

Package

Shipping†

ORDERING INFORMATION

MTD10N10EL

DPAK

75 Units/Rail

DPAK

CASE 369C

(Surface Mount)

Style 2

MTD10N10ELT4

DPAK

2500 Tape & Reel

1 2

3

4

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

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