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LP5523 Datasheet(PDF) 4 Page - Texas Instruments |
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LP5523 Datasheet(HTML) 4 Page - Texas Instruments |
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4 / 56 page  LP5523 SNVS550D – SEPTEMBER 2009 – REVISED MAY 2013 www.ti.com Thermal Properties Junction-to-Ambient Thermal Resistance ( θJA), 87°C/W YFQ0025LLA Package (1) (1) Junction-to-ambient thermal resistance is highly application and board-layout dependent. In applications where high maximum power dissipation exists, special care must be paid to thermal dissipation issues in board design. Electrical Characteristics (1) (2) (3) Limits in standard typeface are for TA = 25°C. Limits in boldface type apply over the operating ambient temperature range ( −30°C < TA < +85°C). Unless otherwise noted, specifications apply to the LP5523 Block Diagram with: VDD = 3.6V, VEN = 1.65V, COUT = 1.0 µF, CIN = 1.0 µF, C1–2 = 0.47 µF. (4) Symbol Parameter Condition Min Typ Max Units VEN = 0V, CHIP_EN=0 (bit), external 32 kHz clock running or 0.2 1 µA not running Standby supply current CHIP_EN=0 (bit), external 32 1.0 1.7 µA kHz clock not running CHIP_EN=0 (bit), external 32 1.4 2.3 µA kHz clock running External 32 kHz clock running, charge pump and current source 0.6 0.75 mA IVDD outputs disabled Charge pump in 1x mode, no Normal Mode Supply Current load, current source outputs 0.8 0.95 mA disabled Charge pump in 1.5x mode, no load, current source outputs 1.8 mA disabled External 32 kHz clock running 10 15 µA Power Save Mode Supply Current Internal oscillator running 0.6 0.75 mA Internal Oscillator Frequency −4 +4 fOSC % Accuracy −7 +7 (1) The Electrical characteristics tables list ensured specifications under the listed Recommended Conditions except as otherwise modified or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and are not ensured. (2) All voltages are with respect to the potential at the GND pin. (3) Min and Max limits are ensured by design, test, or statistical analysis. (4) Low-ESR Surface-Mount Ceramic Capacitors (MLCCs) used in setting electrical characteristics. Charge Pump Electrical Characteristics (1) (2) (3) Symbol Parameter Condition Min Typ Max Units Gain = 1.5x 3.5 ROUT Charge Pump Output Resistance Ω Gain = 1x 1 fSW Switching Frequency 1.25 MHz Gain = 1.5x 1.2 IGND Ground Current mA Gain = 1x 0.3 tON VOUT Turn-On Time (4) VDD = 3.6V, IOUT = 60 mA 100 µs (1) The Electrical characteristics tables list ensured specifications under the listed Recommended Conditions except as otherwise modified or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and are not ensured. (2) All voltages are with respect to the potential at the GND pin. (3) Min and Max limits are ensured by design, test, or statistical analysis. (4) Turn-on time is measured from the moment the charge pump is activated until the VOUT crosses 90% of its target value. 4 Submit Documentation Feedback Copyright © 2009–2013, Texas Instruments Incorporated Product Folder Links: LP5523 |
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