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BAT86 Datasheet(PDF) 1 Page - Diode Semiconductor Korea |
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BAT86 Datasheet(HTML) 1 Page - Diode Semiconductor Korea |
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1 / 1 page FEATURES For general purpose applications This diodes features very low turn-on voltage and fast switching. This devices are protected MECHANICAL DATA Case:JEDEC DO--35,glas s cas e Weight: Approx. 0.13 gram Symbols Min. UNITS 50.0 V V V V V V A pF ns /W 200 1) 125 VF Value 50.0 200 1) 500 1) 5 300 1) 1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature Continuous reverse voltage Forw ard continuous current @ TA=25 Repetitive peak f orw ard current @ tp<1s, <=0.5,TA=25 0.6 0.9 5.0 8 trr RθJA @ IF=100mA Leakage current VR=40V Junction capacitance at VR=1V,f=1MHz Reverse recovery time form IF=10mA to IR=10mA to IR=1mA Max. Typ. c-55 ---+ 150 ELECTRICAL CHARACTERISTICS Forw ard voltage V mA mA mw Ptot TJ TA voltage, such as electrostatic discharges Pow er dissipation @ TA=25 fast switching and low logic level applications Metal s ilicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices,s teering,bias ing and coupling diodes for UNITS c-55 ---+ 125 Polarity: Color band denotes cathode end ABSOLUTE RATINGS VR IF IFRM Junction temperature Ambient operating temperature range BAT86 by a PN junction guard ring against exces sive SMALL SIGNAL SCHOTTKY DIODES VOLTAGE RANGE: 50 V CURRENT: 0.2 A DO - 35(GLASS) @ IF=10mA @ IF=30mA 0.365 0.7 IR 0.2 0.3 Storage temperature range TSTG Reverse breakdow n voltage tested w ith 100 A pulses Symbols VR 0.38 Pulse test tp<300 s, <2% @ IF=0.1mA @ IF=1mA 0.45 1)Valid provided that leads at a distance of 4mm f rom case are kept at ambient temperature 0.275 0.46 Thermal resistance junction to ambient air CJ Dimensions in millimeters Diode Semiconductor Korea www.diode.kr |
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