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BAV199 Datasheet(PDF) 2 Page - Diode Semiconductor Korea |
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BAV199 Datasheet(HTML) 2 Page - Diode Semiconductor Korea |
2 / 3 page Dual surface mount low leakage diode BAV199 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN MAX UNIT Reverse breakdown voltage V(BR) IR= 100μA 85 V Reverse voltage leakage current IR VR=75V VR=75V Tj=150℃ 5.0 80 nA nA Forward voltage VF IF=1mA IF=10mA IF=50mA IF=150mA 900 1000 1100 1250 mV Junction capacitance Cj VR=0V f=1MHz 2.0 pF Reverse recovery time trr IF=IR=10mA Irr=0.1*IR RL=100Ω 3.0 μS TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified www.diode.kr Diode Semiconductor Korea |
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