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SIC06A065T-AU_T0_000A1 Datasheet(PDF) 2 Page - Pan Jit International Inc.

Part # SIC06A065T-AU_T0_000A1
Description  SILICON CARBIDE SCHOTTKY DIODE
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Manufacturer  PANJIT [Pan Jit International Inc.]
Direct Link  http://www.panjit.com.tw
Logo PANJIT - Pan Jit International Inc.

SIC06A065T-AU_T0_000A1 Datasheet(HTML) 2 Page - Pan Jit International Inc.

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SiC06A065T-AU
March 2,2015-REV.02
Page 2
Maximum Ratings
Electrical Characteristics
PARAMETER
SYMBOL
TEST CONDITIONS
VALUE
UNITS
Non-Repetitive Peak Forward Surge Current
(TP=10mS, Half Sine Wave)
IFSM
TC=25
oC
50
A
TC=125
oC
44
A
Non-Repetitive Peak Forward Surge Current
(TP=10uS, Pulse)
TC=25
oC
210
A
Power Dissipation
PD
TC=25
oC
TC=125
oC
88
29
W
W
Operating Junction Temperature
TJ
175
oC
Storage Temperature
TSTG
-55 to 175
oC
Thermal Resistance Junction to Case
RθJC
1.7
oC/W
PARAMETER
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNITS
DC Blacking Voltage
VDC
IR =100uA, TJ=25
oC
650
770
-
V
Forward Voltage
VF
IF =6A, TJ=25
oC
-
1.5
1.8
V
IF =6A, TJ=175
oC
-
1.9
2.2
V
Reverse Current
IR
VR =650V, TJ=25
oC
-
3
50
uA
VR =650V, TJ=175
oC
-
17
190
uA
Total Capacitive Charge
QC
IF =6A, di/dt=300A/uS,
VR =400V, TJ=25
oC
-
12
-
nC
Total Capacitance
C
VR =1V, TJ=25
oC, f=1MHz
-
234
-
pF
VR =200V, TJ=25
oC, f=1MHz
-
36
-
pF
VR =400V, TJ=25
oC, f=1MHz
-
36
-
pF


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