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SIC10A065ND Datasheet(PDF) 1 Page - Pan Jit International Inc. |
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SIC10A065ND Datasheet(HTML) 1 Page - Pan Jit International Inc. |
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1 / 5 page  SiC10A065ND June 13,2016-REV.00 Page 1 SILICON CARBIDE SCHOTTKY DIODE Voltage 650 V Current 10 A TO-263 Unit: inch(mm) Features Temperature Independent Switching Behavior Low Conduction and Switching Loss High Surge Current Capability Positive Temperature Coefficient on VF Fast Reverse Recovery Mechanical Data Case: Molded plastic, TO-263 Marking: 10A065ND Benefits High Frequency Operation Higher System Efficiency Environmental Protection Parallel Device Convenience Hard Switching & High Reliability High Temperature Application Maximum Ratings PARAMETER SYMBOL TEST CONDITIONS VALUE UNITS Maximum Repetitive Peak Reverse Voltage VRRM TJ=25 oC 650 V Maximum RMS Voltage VRSM TJ=25 oC 650 V Maximum DC Blocking Voltage VR TJ=25 oC 650 V Continuous Forward Current IF(AV) TC=25 oC TC=125 oC TC=150 oC 25 14 10 A A A Repetitive Peak Forward Surge Current (TP=10mS, Half Sine Wave, D=0.1) IFRM TC=25 oC 59 A TC=125 oC 50 A |
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