6

Rev. A, October 2003

©2003 Fairchild Semiconductor Corporation

(1)

5. Simulation Results

The unclamped inductive switching (UIS) test circuit in Figure 5 was used to compare

the performance of the FDP038AN06A0 (3.8 m

FET model with that of the standard model and measurement results. Incircuit mea-

surements were performed with the device case temperature interfaced to a large

Figure 5. UIS simulation circuit

The UIS simulation for the standard MOSFET model was performed with PSPICE

to the model results in a drain-source breakdown voltage that is only drain current

dependent. It does not demonstrate the device’s breakdown voltage positive tempera-

ture coefficient. Source resistance (G_Rsource) is added to lower the gain at high cur-

the visual resolution of the data at the higher current range.

case

JC

n

dissipatio

j

T

Z

P

T

+

⋅

=

θ